Theory of Modern Electronic Semiconductor Devices

Kevin F. Brennan (Author), April S. Brown (Author)

9780471415411, Wiley

Hardback, published 14 March 2002

464 pages
24.1 x 16 x 2.5 cm, 0.767 kg

"A discussion of important emerging technologies and trends in semiconductor devices..." SciTech Book News

Hier werden Halbleiterbauelemente vorgestellt, die in Mobilkommunikationssystemen, in Computern und vielen anderen High-Tech-Geräten verwendet werden. Das ausgezeichnete Handbuch für Ingenieure und andere Praktiker ist auch für Studenten interessant, denn die physikalische und ingenieurtechnische Prinzipien aller Bauelemente werden ausführlich erläutert.

PREFACE.

1 OVERVIEW OF SEMICONDUCTOR DEVICE TRENDS.

1.1 Moore's Law and Its Implications.

1.2 Semiconductor Devices for Telecommunications.

1.3 Digital Communications.

2 SEMICONDUCTOR HETEROSTRUCTURES.

2.1 Formation of Heterostructures.

2.2 Modulation Doping.

2.3 Two-Dimensional Subband Transport at Heterointerfaces.

2.4 Strain and Stress at Heterointerfaces.

2.5 Perpendicular Transport in Heterostructures and Superlattices.

2.6 Heterojunction Materials Systems: Intrinsic and Extrinsic Properties.

Problems.

3 HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS.

3.1 Motivation.

3.2 Basics of Heterostructure Field-Effect Transistors.

3.3 Simplified Long-Channel Model of a MODFET.

3.4 Physical Features of Advanced State-of-the-Art MODFETs.

3.5 High-Frequency Performance of MODFETs.

3.6 Materials Properties and Structure Optimization for HFETs.

Problems.

4 HETEROSTRUCTURE BIPOLAR TRANSISTORS.

4.1 Review of Bipolar Junction Transistors.

4.2 Emitter-Base Heterojunction Bipolar Transistors.

4.3 Base Transport Dynamics.

4.4 Nonstationary Transport Effects and Breakdown.

4.5 High-Frequency Performance of HBTs.

4.6 Materials Properties and Structure Optimization for HBTs .

Problems.

5 TRANSFERRED ELECTRON EFFECTS, NEGATIVE DIFFERENTIAL RESISTANCE, AND DEVICES.

5.1 Introduction.

5.2 k-Space Transfer.

5.3 Real-Space Transfer.

5.4 Consequences of NDR in a Semiconductor.

5.5 Transferred Electron-Effect Oscillators: Gunn Diodes.

5.6 Negative Differential Resistance Transistors.

5.7 IMPATT Diodes.

Problems.

6 RESONANT TUNNELING AND DEVICES.

6.1 Physics of Resonant Tunneling: Qualitative Approach.

6.2 Physics of Resonant Tunneling: Envelope Approximation.

6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping Conduction.

6.4 Resonant Tunneling Diodes: High-Frequency Applications.

6.5 Resonant Tunneling Diodes: Digital Applications.

6.6 Resonant Tunneling Transistors.

Problems.

7 CMOS: DEVICES AND FUTURE CHALLENGES.

7.1 Why CMOS?

7.2 Basics of Long-Channel MOSFET Operation.

7.3 Short-Channel Effects.

7.4 Scaling Theory.

7.5 Processing Limitations to Continued Miniaturization.

Problems.

8 BEYOND CMOS: FUTURE APPROACHES TO COMPUTING HARDWARE.

8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs, and SiGe.

8.2 Quantum-Dot Devices and Cellular Automata.

8.3 Molecular Computing.

8.4 Field-Programmable Gate Arrays and Defect-Tolerant Computing.

8.5 Coulomb Blockade and Single-Electron Transistors.

8.6 Quantum Computing.

Problems.

9 MAGNETIC FIELD EFFECTS IN SEMICONDUCTORS.

9.1 Landau Levels.

9.2 Classical Hall Effect.

9.3 Integer Quantum Hall Effect.

9.4 Fractional Quantum Hall Effect.

9.5 Shubnikov-de Haas Oscillations.

Problems.

REFERENCES.

APPENDIX A: PHYSICAL CONSTANTS.

APPENDIX B: BULK MATERIAL PARAMETERS.

Table I: Silicon.

Table II: Ge.

Table III: GaAs.

Table IV: InP.

Table V: InAs.

Table VI: InN.

Table VII: GaN.

Table VIII: SiC.

Table IX: ZnS.

Table X: ZnSe.

Table XI : Al x Ga 1 fx As.

Table XI I : Ga 0:47 In 0:53 As.

Table XIII: Al 0:48 In 0:52 As.

Table XI V: Ga 0:5 In 0:5 P.

Table XV: Hg 0:70 Cd 0:30 Te.

APPENDIX C: HETEROJUNCTION PROPERTIES.

INDEX.

Subject Areas: Electronics & communications engineering [TJ]