The MOS System

A detailed, up-to-date guide to modern MOS transistors, describing key tools, cutting-edge models, novel phenomena and current challenges.

Olof Engström (Author)

9781107005938, Cambridge University Press

Hardback, published 25 September 2014

364 pages, 214 b/w illus.
25.2 x 17.8 x 2 cm, 0.87 kg

This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.

1. Introduction
2. Basic properties of the MOS system
3. Basic properties of the gate stack
4. Electron states at MOS interfaces
5. Carrier capture at bulk oxide traps
6. Electrical characterization by Fermi-probe technique
7. Electrical characterization by thermal action
8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy
9. Electron spin resonance
10. MOS systems with silicon dioxide dielectrics
11. MOS systems with high-k dielectrics
12. Gate metals and effective work function
13. Transmission probabilities and current leakage in gate oxides
14. MOS systems on high-mobility channel materials.

Subject Areas: Electronic devices & materials [TJFD], Circuits & components [TJFC], Electronics engineering [TJF], Mechanics of solids [TGMD], Condensed matter physics [liquid state & solid state physics PHFC]