Silicon Carbide 2008 — Materials, Processing and Devices: Volume 1069

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Michael Dudley (Edited by), C. Mark Johnson (Edited by), Adrian R. Powell (Edited by), Sei-Hyung Ryu (Edited by)

9781605110394, Cambridge University Press

Hardback, published 31 July 2008

283 pages
28 x 19 x 2.2 cm, 0.518 kg

Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

Part I. Bulk Material and Characterization
Part II. Epitaxial Material and Characterization
Part III. Device Processing and Characterization
Author index
Subject index.

Subject Areas: Materials science [TGM]