Nanoscale MOS Transistors
Semi-Classical Transport and Applications

Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.

David Esseni (Author), Pierpaolo Palestri (Author), Luca Selmi (Author)

9780521516846, Cambridge University Press

Hardback, published 20 January 2011

488 pages, 164 b/w illus. 30 tables
25.4 x 18.2 x 2.5 cm, 1.1 kg

'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.' Asen Asenov, University of Glasgow

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

1. Introduction
2. Bulk semiconductors and the semi-classical model
3. Quantum confined inversion layers
4. Carrier scattering in silicon MOS transistors
5. The Boltzmann transport equation
6. The Monte Carlo method for the Boltzmann transport equation
7. Simulation of bulk and SOI silicon MOSFETs
8. MOS transistors with arbitrary crystal orientation
9. MOS transistors with strained silicon channels
10. MOS transistors with alternative materials
Appendix A. Mathematical definitions and properties
Appendix B. Integrals and transformations over a finite area A
Appendix C. Calculation of the equi-energy lines with the k-p model
Appendix D. Matrix elements beyond the envelope function approximation
Appendix E. Charge density produced by a perturbation potential.

Subject Areas: Electronic devices & materials [TJFD], Electronics engineering [TJF]