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Metalorganic Vapor Phase Epitaxy (MOVPE)
Growth, Materials Properties, and Applications
Stuart Irvine (Edited by), Peter Capper (Edited by)
9781119313014, Wiley
Hardback, published 11 October 2019
592 pages
25.2 x 18.3 x 3.1 cm, 1.383 kg
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
List of Contributors xv 1 Introduction to Metalorganic Vapor Phase Epitaxy 1 1.1 Historical Background of MOVPE 1 2 Fundamental Aspects of MOVPE 19 2.1 Introduction 19 3 Column III: Phosphides, Arsenides, and Antimonides 71 3.1 Introduction 71 4 Nitride Semiconductors 109 4.1 Introduction 109 5 Metamorphic Growth and Multijunction III-V Solar Cells 149 5.1 Introduction to MOVPE for Multijunction Solar Cells 149 6 Quantum Dots 175 6.1 General Introduction to the Topic 175 7 III-V Nanowires and Related Nanostructures: From Nitrides to Antimonides 217 7.1 Introduction to Nanowires and Related Nanostructures 217 8 Monolithic III/V integration on (001) Si substrate 241 8.1 Introduction 241 9 MOVPE Growth of Cadmium Mercury Telluride and Applications 293 9.1 Requirement for Epitaxy 293 10 Cadmium Telluride and Related II-VI Materials 325 10.1 Introduction and Historical Background 325 11 ZnO and Related Materials 355 11.1 Introduction 355 12 Epitaxial Systems for III-V and III-Nitride MOVPE 423 12.1 Introduction 423 13 Ultrapure Metal-Organic Precursors for MOVPE 467 13.1 Introduction 467 14 Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors 507 14.1 Introduction – Looking Back 507 Acknowledgments 539
Foreword xvii
Series Preface xix
Preface xxi
Safety and Environment Disclaimer xxiii
S.J.C. Irvine and P. Capper
1.2 Basic Reaction Mechanisms 4
1.3 Precursors 8
1.4 Types of Reactor Cell 9
1.5 Introduction to Applications of MOVPE 11
1.6 Health and Safety Considerations in MOVPE 15
1.7 Conclusions 16
G.B. Stringfellow
2.2 Thermodynamics 20
2.3 Kinetics 35
2.4 Surface Processes 40
2.5 Specific Systems 52
2.6 Summary 59
H. Hardtdegen and M. Mikulics
3.2 Precursors for Column III Phosphides, Arsenides, and Antimonides 73
3.3 GaAs-Based Materials 74
3.4 InP-Based Materials 82
3.5 Column III Antimonides Properties and Deposition 86
3.6 In Situ Optical Characterization/Growth Control 100
3.7 Conclusions 100
A. Dadgar and M. Weyers
4.2 Properties of III-Nitrides 110
4.3 Challenges in the Growth of III-Nitrides 111
4.4 Substrates 120
4.5 MOVPE Growth Technology 130
4.6 Economic Importance 136
4.7 Conclusions 138
N.H. Karam, C.M. Fetzer, X.-Q. Liu, M.A. Steiner, and K.L. Schulte
5.2 Upright Metamorphic Multijunction (UMM) Solar Cells 154
5.3 Inverted Metamorphic Multijunction (IMM) Solar Cells 162
5.4 Conclusions 169
E. Hulicius, A. Hospodková, and M. Zíková
6.2 AIIIBV Materials and Structures 178
6.3 Growth Procedures 181
6.4 In Situ Measurements 193
6.5 Structure Characterization 198
6.6 Applications 203
6.7 Summary 208
6.8 Future Perspectives 208
H.J. Joyce
7.2 Geometric and Crystallographic Properties of III-V Nanowires 219
7.3 Particle-Assisted MOVPE of Nanowires 222
7.4 Selective-Area MOVPE of Nanowires and Nanostructures 228
7.5 Alternative Techniques for MOVPE of Nanowires 231
7.6 Novel Applications of Nanowires 231
7.7 Concluding Remarks 233
B. Kunert and K. Volz
8.2 III/V-Si Interface 243
8.3 Heteroepitaxy of Bulk Layers on Si 255
8.4 Conclusions 282
C.D. Maxey, P. Capper, and I.M. Baker
9.2 History 294
9.3 Substrate Choices 295
9.4 Reactor Design 297
9.5 Process Parameters 299
9.6 Metalorganic Sources 299
9.7 Uniformity 300
9.8 Reproducibility 302
9.9 Doping 302
9.10 Defects 304
9.11 Annealing 307
9.12 In Situ Monitoring 308
9.13 Background for Applications of MOVPE MCT 308
9.14 Manufacturing Technology for MOVPE Photodiode Arrays 311
9.15 Advanced MCT Technologies 312
9.16 MOVPE MCT for Scientific Applications 316
9.17 Conclusions and Future Trends for MOVPE MCT Arrays 320
G. Kartopu and S.J.C. Irvine
10.2 CdTe Homoepitaxy 327
10.3 CdTe Heteroepitaxy 327
10.4 Low-Temperature Growth and Alternative Precursors 330
10.5 Photoassisted MOVPE 332
10.6 Plasma-Assisted MOVPE 333
10.7 Polycrystalline MOCVD 333
10.8 In Situ Monitoring of CdTe 334
10.9 MOCVD of CdTe for Planar Solar Cells 337
10.10 Core-Shell Nanowire Photovoltaic Devices 345
10.11 Inline MOCVD for Scaling of CdTe 347
10.12 MOCVD of CdTe for Radiation Detectors 350
V. Muñoz-Sanjosé and S.J.C. Irvine
11.2 Sources for the MOCVD Growth of ZnO and Related Materials 356
11.3 Substrates for the MOCVD Growth of ZnO and Related Materials 364
11.4 Some Techniques for the MOCVD Growth of ZnO and Related Materials 373
11.5 Crystal Growth of ZnO and Related Materials 380
11.6 Conclusions 405
W. Lundin and R. Talalaev
12.2 Typical Engineering Solutions Inside MOVPE Tools 424
12.3 Reactors for MOVPE of III-V Materials 438
12.4 Reactors for MOVPE of III-N Materials 451
12.4.5 Horizontal Flow Reactors for III-N MOVPE 459
12.5 Twenty-Five Years of Commercially Available III-N MOVPE Reactor Evolution 462
D.V. Shenai-Khatkhate
13.2 Stringent Requirements for Suitable MOVPE Precursors 472
13.3 Synthesis and Purification Strategies for Ultrapure MOVPE Precursors 472
13.4 MOVPE Precursors for III-V Compound Semiconductors 483
13.5 MOVPE Precursors for II-VI Compound Semiconductors 493
13.6 MOVPE Dopants for Compound Semiconductors 499
13.7 Environment, Health, and Safety (EHS) Aspects of MOVPE Precursors 500
13.8 Conclusions and Future Trends 502
T. Detchprohm, J.-H. Ryou, X. Li, and R.D. Dupuis
14.2 Future Equipment Development 510
14.3 Future Applications for MOCVD Research in Semiconductor Materials 515
14.4 Past, Present, and Future Commercial Applications 535
14.5 Summary and Conclusions 538
References 539
Index 549
Subject Areas: Mechanical engineering & materials [TG]
