Materials and Physics for Nonvolatile Memories: Volume 1160

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Yoshihisa Fujisaki (Edited by), Rainer Waser (Edited by), Tingkai Li (Edited by), Caroline Bonafos (Edited by)

9781107408296, Cambridge University Press

Paperback / softback, published 5 June 2014

216 pages
22.9 x 15.2 x 1.2 cm, 0.3 kg

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.

Part I. Advanced Flash I
Part II. Charge Trap Memory I
Part III. Magnetic Resistive RAM
Part IV. Poster Session: Advanced Flash II
Part V. Poster Session: Charge Trap II and MRAM
Part VI. Ferroelectric Memory
Part VII. Resistive Switching RAM I
Part VIII. Resistive Switching RAM II
Part IX. Poster Session: Resistive Switching RAM III
Part X. Poster Session: Phase Change RAM I
Part XI. Phase Change RAM II
Part XII. Phase Change RAM III
Author index
Subject index.

Subject Areas: Materials science [TGM]