Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling: Volume 1252

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Shriram Ramanathan (Edited by), Supratik Guha (Edited by), Jochen Mannhart (Edited by), Andrew C. Kummel (Edited by), Heiji Watanabe (Edited by), Iain Thayne (Edited by), Prashant Majhi (Edited by)

9781605112299, Cambridge University Press

Hardback, published 27 December 2010

0 pages
23.5 x 16 x 1.5 cm, 0.4 kg

This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5–9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.

Part I. Novel Devices
Part II. Ge MOSFET
Part III. Poster Session
Part IV. III-V MOSFET
Part V. Novel Devices and III-V MOSFET
Part VI. Materials and Devices for beyond CMOS Scaling
Author index
Subject index.

Subject Areas: Materials science [TGM]