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Hot-Carrier Effects in MOS Devices
Eiji Takeda (Author), Cary Y. Yang (Author), Akemi Miura-Hamada (Author)
9780126822403, Elsevier Science
Hardback, published 28 November 1995
312 pages
22.9 x 15.2 x 2.3 cm, 0.58 kg
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
MOS Device Fundamentals
Hot-Carrier Injection Mechanisms
Hot-Carrier Device Degradation
AC and Process-Induced Hot-Carrier Effects
Hot-Carrier Effects at Low Temperature and Low Voltage
Dependence of Hot-Carrier Phenomena on Device Structure
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Gate-to-Drain Overlatpped Devices (GOLD)
Subject Areas: Educational: IT & computing, ICT [YQTU], Quantity surveying [TNCB1], Electronics & communications engineering [TJ], Materials science [TGM], Instruments & instrumentation engineering [TBM], Physical chemistry [PNR], Spectrum analysis, spectrochemistry, mass spectrometry [PNFS], Condensed matter physics [liquid state & solid state physics PHFC]
