Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

Understand the theory, design and applications of FD/SOI MOSFETs and 3-D FinFETs with this concise and authoritative guide.

Jerry G. Fossum (Author), Vishal P. Trivedi (Author)

9781107030411, Cambridge University Press

Hardback, published 29 August 2013

226 pages, 129 b/w illus. 15 tables 54 exercises
25.2 x 17.8 x 1.5 cm, 0.61 kg

Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Preface
List of physical constants
List of symbols
1. Introduction
2. Unique features of UTB MOSFETs
3. Planar fully depleted SOI MOSFETs
4. FinFETs
Appendix: UFDG
References
Index.

Subject Areas: Circuits & components [TJFC], Electronics engineering [TJF], Electronics & communications engineering [TJ]