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Fundamentals of Silicon Carbide Technology
Growth, Characterization, Devices and Applications
Tsunenobu Kimoto (Author), James A. Cooper (Author)
9781118313527, Wiley
Hardback, published 21 November 2014
400 pages
24.6 x 16.8 x 3.3 cm, 1.111 kg
“Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November 2015) “If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems designers. It really is the book to have on SiC, and because of its breadth as well as depth, would be a good supplement to solid - state physics or electronics books, device design or SPICE modeling, or to provide a solid foundation for circuit design with SiC devices.” (How2Power.com, 1 March 2015)
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:
About the Authors xi Preface xiii 1 Introduction 1 1.1 Progress in Electronics 1 1.2 Features and Brief History of Silicon Carbide 3 1.3 Outline of This Book 6 References 6 2 Physical Properties of Silicon Carbide 11 2.1 Crystal Structure 11 2.2 Electrical and Optical Properties 16 2.3 Thermal and Mechanical Properties 30 2.4 Summary 32 References 33 3 Bulk Growth of Silicon Carbide 39 3.1 Sublimation Growth 39 3.2 Polytype Control in Sublimation Growth 46 3.3 Defect Evolution and Reduction in Sublimation Growth 50 3.4 Doping Control in Sublimation Growth 59 3.5 High-Temperature Chemical Vapor Deposition 64 3.6 Solution Growth 66 3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition 67 3.8 Wafering and Polishing 67 3.9 Summary 69 References 69 4 Epitaxial Growth of Silicon Carbide 75 4.1 Fundamentals of SiC Homoepitaxy 75 4.2 Doping Control in SiC CVD 90 4.3 Defects in SiC Epitaxial Layers 93 4.4 Fast Homoepitaxy of SiC 105 4.5 SiC Homoepitaxy on Non-standard Planes 107 4.6 SiC Homoepitaxy by Other Techniques 110 4.7 Heteroepitaxy of 3C-SiC 111 4.8 Summary 114 References 115 5 Characterization Techniques and Defects in Silicon Carbide 125 5.1 Characterization Techniques 125 5.2 Extended Defects in SiC 155 5.3 Point Defects in SiC 165 5.4 Summary 179 References 180 6 Device Processing of Silicon Carbide 189 6.1 Ion Implantation 189 6.2 Etching 208 6.3 Oxidation and Oxide/SiC Interface Characteristics 212 6.4 Metallization 248 6.5 Summary 262 References 263 7 Unipolar and Bipolar Power Diodes 277 7.1 Introduction to SiC Power Switching Devices 277 7.2 Schottky Barrier Diodes (SBDs) 282 7.3 pn and pin Junction Diodes 286 7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes 296 References 300 8 Unipolar Power Switching Devices 301 8.1 Junction Field-Effect Transistors (JFETs) 301 8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) 312 References 350 9 Bipolar Power Switching Devices 353 9.1 Bipolar Junction Transistors (BJTs) 353 9.2 Insulated-Gate Bipolar Transistors (IGBTs) 373 9.3 Thyristors 392 References 415 10 Optimization and Comparison of Power Devices 417 10.1 Blocking Voltage and Edge Terminations for SiC Power Devices 417 10.2 Optimum Design of Unipolar Drift Regions 435 10.3 Comparison of Device Performance 440 References 443 11 Applications of Silicon Carbide Devices in Power Systems 445 11.1 Introduction to Power Electronic Systems 445 11.2 Basic Power Converter Circuits 446 11.3 Power Electronics for Motor Drives 458 11.4 Power Electronics for Renewable Energy 471 11.5 Power Electronics for Switch-Mode Power Supplies 476 11.6 Performance Comparison of SiC and Silicon Power Devices 481 References 486 12 Specialized Silicon Carbide Devices and Applications 487 12.1 Microwave Devices 487 12.2 High-Temperature Integrated Circuits 497 12.3 Sensors 499 References 509 Appendix A Incomplete Dopant Ionization in 4H-SiC 511 References 515 Appendix B Properties of the Hyperbolic Functions 517 Appendix C Major Physical Properties of Common SiC Polytypes 521 C. 1 Properties 521 C. 2 Temperature and/or Doping Dependence of Major Physical Properties 522 References 523 Index 525
Subject Areas: Electronics & communications engineering [TJ]
