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Field Effect Transistors
P. Suveetha Dhanaselvam (Edited by), Dhanaselvam (Author), K. Srinivasa Rao (Edited by), Shiromani Balmukund Rahi (Edited by), Dharmendra Singh Yadav (Edited by)
9781394248476, Wiley
Hardback, published 28 March 2025
528 pages
25.4 x 17.8 x 3.1 cm, 0.794 kg
Field Effect Transistors is an essential read for anyone interested in the future of electronics, as it provides a comprehensive yet accessible exploration of innovative semiconductor devices and their applications, making it a perfect resource for both beginners and seasoned professionals in the field. Miniaturization has become the slogan of the electronics industry. Field Effect Transistors serves as a short encyclopedia for young minds looking for solutions in the miniaturization of semiconductor devices. It explores the characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law have been proposed and designed, a complete history of the existing and proposed semiconductor devices is not available. This book focuses on developments and research in emerging semiconductor FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized semiconductor devices. Field Effect Transistors is an easy-to-understand guide, making it excellent for those who are new to the subject, giving insight and analysis of recent developments and developed semiconductor device structures along with their applications.
Preface xix 1 Classical MOSFET Evolution: Foundations and Advantages 1 1.1 Introduction of Classical MOSFET 1 1.2 Dual-Gate MOSFET 3 1.3 Gate-All-Around MOSFET 7 1.4 ID -VG and ID -VG Characteristics of Conventional MOSFETs 8 1.5 Capacitance Characteristics of Conventional MOSFETs 12 1.6 Frequency-Dependent Behavior 15 1.7 Conclusion 18 References 19 2 Marvels of Modern Semiconductor Field-Effect Transistors 23 2.1 Introduction 23 2.2 Tunnel Field-Effect Transistor 25 2.3 Junctionless Transistors 27 2.4 GAA-FETs the Origin of Nanowire FETs and Nanosheet FETs 31 2.5 Significance in Modern Electronics 32 2.6 Main Electrical Characteristics of GAA-FETs 33 2.7 GAA-FET Classification 35 2.8 Nanowire Field-Effect Transistors (NW-FETs) 36 2.9 Nanosheet Field-Effect Transistors (NS-FETs) 37 2.10 Electrical Characteristics 38 2.11 Conclusion 40 References 42 3 Introduction to Modern FET Technologies 45 3.1 Introduction 45 3.2 FinFETs (Fin Field-Effect Transistors) 46 3.3 Unveiling Multi-Gate MOSFETs: A Symphony of Efficiency 47 3.4 Unveiling Nanoscale MOSFETs: The Miniaturization Marvel 49 3.5 High–Electron Mobility Transistors (HEMTs): A Leap into the Future of FET Technology 50 3.6 Graphene Field-Effect Transistors (GFETs): Pioneering the Future of FET Technology 51 3.7 Tunnel Field-Effect Transistors (TFETs): Navigating the Quantum Realm of Future Electronics 53 3.8 Silicon Carbide (SiC) MOSFETs: Transforming Power Electronics for a Greener Future 54 3.9 Power MOSFETs: Empowering the Future of High-Efficiency Power Electronics 55 3.10 Gallium Nitride (GaN) High–Electron Mobility Transistors (HEMTs): Unleashing the Power of Wide Bandgap Semiconductors 56 3.11 Organic Field-Effect Transistors (OFETs): Bridging the Gap to Flexible and Sustainable Electronics 58 3.12 Conclusion 59 Bibliography 60 4 Scaling of Field-Effect Transistors 63 4.1 Introduction 63 4.2 Short-Channel Effect 65 4.3 FinFET Overview 67 4.4 GAAFET Overview 69 4.5 Conclusions 71 References 71 5 Future Prospective Beyond CMOS Technology Design 73 5.1 Introduction 73 5.2 Spintronics 74 5.3 Carbon Nanotube Transistors 75 5.4 Memristor 77 5.4.1 Working Principle 77 5.5 Applications 78 5.6 Quantum Dots 78 References 79 6 Nanowire Transistors 81 6.1 Introduction 81 6.2 Nanowire FETs 83 6.3 Organic Nanowire Transistors 89 6.4 Conclusion 90 References 90 7 Advancement of Nanotechnology and NP-Based Biosensors 93 7.1 Introduction 93 7.2 Metal Oxide–Based Biosensors 95 7.3 Zinc Oxide–Based Biosensor 96 7.4 AuNP-Based Biosensors 98 7.5 GR-Based Biosensors 101 References 102 8 Technology Behind Junctionless Semiconductor Devices 105 8.1 Introduction 106 8.2 Operating Modes Based on the Structure of the Device 112 8.3 TCAD Simulations 116 8.4 Effect of Temperature 119 8.5 Results and Discussions 120 8.6 Conclusion 123 References 123 9 Breaking Barriers: Junctionless Metal-Oxide-Semiconductor Transistors Reinventing Semiconductor Technology 125 9.1 Introduction 125 9.2 Junctionless MOS Transistors: Principles and Concepts 130 9.3 Fabrication Techniques for Junctionless Transistors 134 9.4 Real-World Implementations of Junctionless Transistors 139 9.5 Conclusion 143 9.6 Applications 143 References 143 10 Performance Estimation of Junctionless Tunnel Field-Effect Transistor (JL-TFET): Device Structure and Simulation Through TCAD 145 10.1 Introduction 145 10.2 Junctionless TFETs 148 10.3 Design Structure of Junctionless TFETs 150 10.4 Conclusion 154 References 154 11 Science and Technology of Tunnel Field-Effect Transistors 157 11.1 Phenomenon of Quantum Tunneling 157 11.2 Tunneling Mathematics 158 11.3 Tunnel Field-Effect Transistors (TFETs) 165 11.4 Conclusion 183 References 183 12 Circuits Designed for Energy-Harvesting Applications That Leverage TFETs to Achieve Extremely Low Power Consumption 189 12.1 Introduction 189 12.2 Energy Harvesting in an Era Beyond Moore’s Law 193 12.3 Tunnel Field-Effect Transistors (TFETs) as a Vital Technology for Energy Harvesting 194 12.4 Tunnel FET Technology: State of the Art 196 12.5 Band-to-Band Tunneling (BTBT) Current 196 12.6 MOSFET vs. TFET 197 12.7 Innovations in the Configurations of TFETs 200 12.8 Conclusion 202 References 202 13 A Ferroelectric Negative-Capacitance TFET with Extended Back Gate for Improvement in DC and Analog/HF Parameters 205 13.1 Introduction 206 13.2 Architectural Configuration and Simulation Approach 207 13.3 Results and Discussion 208 13.4 Conclusion 217 References 217 14 Basic Concepts of Heterojunction Tunnel Field-Effect Transistors 221 14.1 Introduction 221 14.2 Boosting TFET ON Current 223 14.3 Heterojunction TFET 225 14.4 Various Heterojunction Structures 226 14.5 Conclusion 232 References 233 15 Boosting Performance of Charge Plasma–Based TFETs 235 15.1 Introduction 235 15.2 What is Charge Plasma Concept? 236 15.3 Techniques to Enhance the Performance of Dopingless TFETs 238 15.4 Materials Engineering 238 15.5 Enhancement of the Electrostatic Control 243 15.6 Drawbacks of Dopingless TFET 247 15.7 Benchmarking 251 15.8 Summary 252 Future Scope 252 References 253 16 TFET Device Modeling Using ML Algorithms 257 16.1 Introduction 258 16.2 Role of ML Algorithms in Device Modeling 259 16.3 Simulation of Devices and ML Techniques 261 16.4 Dataset Generation 262 16.5 ml Workflow 263 16.6 Comparison of ML Algorithms 264 References 267 17 Design of Next-Generation Field-Effect Transistors Using Machine Learning 269 17.1 Introduction 269 17.2 Description 270 17.3 Optimizing FET Performance through Machine Learning 271 17.4 Enhancing Predictive Accuracy and Robustness 275 17.5 Integrating ML-Optimized FET Structures with Manufacturing Advances 279 17.6 Conclusion 282 Bibliography 282 18 Machine Learning–Augmented Blockchain-Based Graphene Field-Effect Transistor Sensor Platform for Biomarker Detection 287 18.1 Introduction 287 18.2 Description 288 18.3 Conclusion 306 Bibliography 306 19 Heterojunction Concept and Technology for FET Developments 311 19.1 Introduction 311 19.2 Concept of Heterojunction 313 19.3 Heterojunction Field-Effect Transistors (HFETs): An Advanced FET 315 19.4 GaAs-Based HEMTs 318 19.5 InP-Based HEMTs 319 19.6 GaN-Based HEMTs and its Applications 320 References 327 20 Characteristic Analysis of GOS HTFET 333 20.1 Introduction 333 20.2 Design Considerations of GOS HTFET 335 20.3 Device Physics and Structures of GOS HTFETs 339 20.4 Model of GOS HTFET 343 20.5 Simulation and Validation of GOS HTFET 345 20.6 Characteristics of GOS HTFET 346 20.7 Limitations of GOS HTFET 351 20.8 Application of GOS HTFET in SRAM Design 351 20.9 Conclusions 352 References 353 21 A Charge-Based 2D Mathematical Model for Dual-Material Gate Fe-Doped AlGaN/AlN/GaN High–Electron Mobility Transistors 355 21.1 Introduction 356 21.2 Device Structure and Description 356 21.3 Mathematical Formulation 358 21.4 Summary 370 References 370 22 Exploring Vertical Transition Metal Dichalcogenide Heterostructure MOSFET: A Comprehensive Review 373 22.1 Introduction 373 22.2 Transition Metal Dichalogenides (TMDs) 375 22.3 Heterostructure Transition Metal Dichalcogenides 378 22.4 Some of the TMD-Related Materials 381 22.5 Other Properties 384 22.6 Conclusion 384 References 384 23 Two-Dimensional Materials and Devices for UV Detection 393 23.1 Part 1: Introduction to 2D Materials and UV Detectors 394 23.2 Part 2: Recent Developments in 2D Material–Based UV Detectors 407 23.3 Summary 412 References 413 24 Negative-Capacitance Field-Effect Transistor for Optimization of Power Factor for Modern Applications 417 24.1 Introduction 418 24.2 Requirement of Low-Power MOSFET 418 24.3 Challenges in Classical MOS Devices 419 24.4 Negative Capacitance: Low-Power Device 421 24.5 Fundamental of Negative-Capacitance Technology 422 24.6 Negative-Capacitance Transistors 426 24.7 Fundamental Approach for Low-Power Circuit Design 426 24.8 Future Scope 427 24.9 Conclusion 428 References 428 25 Nanoscale High-K Tri-Material Surrounding-Gate MOSFET—An Insight Analysis 433 25.1 Introduction 433 25.2 Proposed Structure 435 25.3 Analytical Model 435 25.4 Conclusion 441 References 441 26 Nanoscale Field-Effect Transistors (FETs) in RF Applications 443 26.1 Introduction 444 26.2 Fundamental Principles and Operating Characteristics of FETs 447 26.3 Scaling Challenges in Nanoscale FETs for RF Applications 450 26.4 Exploring the Landscape: Field-Effect Transistors (FETs) in Radiofrequency (RF) Applications 452 26.5 Conclusion 454 References 455 27 Emerging Subthreshold Swing FET for Next-Generation Technology Nodes 457 27.1 Introduction 458 27.2 Fundamental Challenges with Conventional FET Device 458 27.3 Developed Emerging Subthreshold Swing FET and its Working Principle 465 27.4 Limitations of Emerging Subthreshold Swing FET 470 27.5 Techniques to Overcome the Limitations of Emerging Subthreshold Swing FET 470 27.6 Conclusion 472 References 472 28 Elucidation of the Impact of Nano Heat Transfer Variability on Three-Dimensional Field-Effect Transistors 477 28.1 Introduction 478 28.2 Mathematical Formulation and Structural Analysis 482 28.3 Results and Discussion 485 28.4 Conclusion 490 References 491 About the Editors 493 Index 495
S. Amir Ghoreishi and Samira Pahlavani
S. Amir Ghoreishi, Mohsen Mahmoudysepehr and Zeinab Ramezani
A. Babu Karuppiah and R. Rajaraja
L. Vinoth Kumar, G. Pradeep Kumar and B. Karthikeyan
P. Suveetha Dhanaselvam, B. Karthikeyan and P. Anand
P. Suveetha Dhanaselvam, B. Karthikeyan, S. Nagarajan and B. Padmanaban
P. Anand and B. Muneeswari
Pavani Kollamudi and Srinivasa Rao Karumuri
G. Vijayakumari, U. Rajasekaran, R. Praveenkumar, S. D. Vijayakumar and V. Kumar
Pradeep Kumar Kumawat, Shilpi Birla and Neha Singh
Zuber Rasool, Nuzhat Yousf, Aadil Anam and S. Intekhab Amin
Basudha Dewan
Anil Kumar Pathakamuri, Chandan Kumar Pandey, Diganta Das, Umakanta Nanda and Shiromani Balmukund Rahi
P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha and P. Kavitha
Iman Chahardah Cherik, Saeed Mohammadi and Hadiseh Hosseinimanesh
P. Vanitha, Paulvanna Nayaki Marimuthu, N. B. Balamurugan and M. Hemalatha
K. Girija Sravani, M. Srikanth, Manikanta Sirigineedi and Padma Bellapukonda
Srinivasa Rao Karumuri, M. Srikanth, J.M.S.V. Ravi Kumar and Bhanurangarao M.
Shashank Kumar Dubey, Soumak Nandi, Kondaveeti Girija Sravani, Sandip Swarnakar, Mukesh Kumar and Aminul Islam
B. V. V. Satyanarayana, T. S. S. Phani, A. K. C. Varma, G. Prasanna Kumar, M. V. Ganeswara Rao and Prudhvi Raj Budumuru
N. B. Balamurugan, M. Hemalatha, M. Suguna and D. Sriram Kumar
Malu U., Charles Pravin J. and Sandeep V.
Penchalaiah Palla, Akbar Basha Dhu-al Shaik, David Jenkins and Srinivasa Rao Karumuri
Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Hanumant Lal and Srinivasa Rao Karumuri
P. Suveetha Dhanaselvam, S. Vasuki, B. Karthikeyan and D. Sriram Kumar
Rajeswari P., Gobinath A., Suresh Kumar N. and Anandan M.
G. Lakshmi Priya, T. Ranjith Kumar, G. Gifta, A. Andrew Roobert and M. Venkatesh
Faouzi Nasri, Husien Salama, Billel Smaani and Khalifa Ahmed Salama
Subject Areas: Electronics & communications engineering [TJ]
