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Field-Effect Transistor Devices
Post-CMOS Theory and Applications
P. Suveetha Dhanaselvam (Edited by), Dhanaselvam (Author), Naima Guenifi (Edited by), Shiromani Balmukund Rahi (Edited by), J. Ajayan (Edited by)
9781394311453, Wiley
Hardback, published 3 June 2026
416 pages
22.9 x 15.2 x 2.6 cm, 0.694 kg
Master the More-Moore paradigm and the cutting-edge material innovations redefining the limits of semiconductor miniaturization with this essential roadmap to the future of global microelectronics fabrication. In today’s rapidly evolving electronics landscape, the relentless pursuit of miniaturization stands as a fundamental objective. This drive fuels substantial investments in semiconductor fabrication facilities worldwide. This book serves as a concise, comprehensive guide to semiconductor device miniaturization. It delves into a wide spectrum of topics, including characteristics, innovative materials, structural modifications, and advancements in semiconductor devices. It meticulously traces the evolution of semiconductor devices, shedding light on both existing and proposed technologies, while emphasizing the significance of Moore’s Law and the More-Moore paradigm. This compendium provides a holistic view of recent developments, incorporating discussions on cutting-edge research and innovative concepts in the field of miniaturized semiconductor devices and their practical applications.
Preface xv 1 Junctionless Multigate Field Effect Transistor 1 2 Heterojunction Field Effect Transistor 33 3 Nanosheet Field Effect Transistor 53 4 Post CMOS Semiconductor Field Effect Transistor 69 5 Underlapped MOSFETs and Its Characteristics 99 6 Fundamental of Carbon Nanowires and its Applications 111 7 Junctionless Transistor 129 8 Field-Effect Transistor-Based Biosensors in Medical Field: Principles and Material Innovations 153 9 Wearable Device Analysis and Applications 175 10 Perovskites: Pioneering the Next Generation of Semiconductor Technologies 189 11 Performance Analysis of Eco-Friendly Perovskite Solar Cells 209 12 Real Time Myocardial Infarction Detection and Localization Using an Advanced VLSI System 229 13 Tunnel Field Effect Transistors and its Application as Label-Free Biosensor 255 14 Graphene Nanosheet Field Effect Transistor 275 15 Design and Performance Analysis of 10 T and 28 T Full Adder Using MOSFET and FinFET 293 16 Investigations of Vital Design Parameters of a Low-Power Amplifying Unit for EEG and Advanced Neuroscience Research 317 17 Heterojunction Tunnel FET with Graphene Nanoribbon 333 18 Hybrid Field Effect Transistor 347 Index 381
Acknowledgment xxiv
R. Ouchen, T. Berghout, F. Djeffal and H. Ferhati
Shahnaz Kossar, Asif Rasool, R. Amiruddin, Syed Abbas Ali, Mohammad Ayaz Ahmad, Nasharath Mapjan, Kasim Sakran Abass and Mir Waqas Alam
P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha, S. Nagarajan, P. Karthikeyan and G. Pradeep Kumar
Vishnudevi N., Thenmozhi T., Vijay M. and P. Suveetha Dhanaselvam
P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha and G. Pradeep Kumar
N. Nagarani, P. Suveetha Dhanaselvam and B. Karthikeyan
S. Manikandan, M. Karthigai Pandian and A. Srinivasan
Shivangi Srivastava and Sajal Agarwal
Sarin Vijay Mythry
P. Suveetha Dhanaselvam, B. Karthikeyan, S. Nagarajan, K. Kavitha, P. Karthikeyan and G. Pradeep Kumar
P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha and G. Pradeep Kumar
Janani V.G., Suveetha Dhanaselavm P., Vasuki S. and Muneeswari B.
Basudha Dewan
S. Raj Kumar, S. Murugan and T. Esther
Varsha Jayaprakash, Boggarapu Lokesh, Aishwarya K. and B. Lakshmi
Sarin Vijay Mythry, Shashi Kant Gupta and Sai Kiran O.
Ritam Dutta and J. Ajayan
K. Kavitha, P. Suveetha Dhanaselvam, B. Karthikeyan, S. Nagarajan, G. Pradeep Kumar and P. Karthikeyan
Subject Areas: Electronics & communications engineering [TJ]
