Ferroelectricity in Doped Hafnium Oxide
Materials, Properties and Devices

Summarizes new information on HfO₂, an emerging ferroelectric material, compares it to other materials, and considers its implementation in semiconductor devices

Uwe Schroeder (Edited by), Cheol Seong Hwang (Edited by), Hiroshi Funakubo (Edited by)

9780081024300, Elsevier Science

Paperback / softback, published 29 March 2019

570 pages
22.9 x 15.1 x 3.5 cm, 0.91 kg

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO₂ and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO₂-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO₂ processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

1. Fundamentals of Ferroelectric and piezoelectric properties 2. HfO2 processes 3. Dopant screening for optimization of the ferroelectric properties 4. Electrode screening for capacitor applications 5. Phase transition 6. Switching kinetics 7. Impact of oxygen vacancies 8. Epitaxial growth of ferroelectric HfO2 9. Thickness scaling Chapter 10. Simulation/Modelling 11. Structural characterization on a nanometer scale: PFM, TEM 12. Comparison to standard ferroelectric materials 13. FE HfO2 based devices

Subject Areas: Electronic devices & materials [TJFD], Electronics & communications engineering [TJ], Materials science [TGM]