Doping in III-V Semiconductors

This is the first book to describe thoroughly the many facets of doping in compound semiconductors.

E. F. Schubert (Author)

9780521017848, Cambridge University Press

Paperback, published 22 August 2005

632 pages, 240 b/w illus. 1 table
22.9 x 15 x 3.6 cm, 0.948 kg

"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics....His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.

1. Shallow impurities
2. Phenomenology of deep levels
3. Semiconductor statistics
4. Growth technologies
5. Doping with elemental sources
6. Gaseous doping sources
7. Impurity characteristics
8. Redistribution of impurities
9. Deep centers
10. Doping in heterostructures, quantum wells, and superlattices
11. Delta doping
12. Characterization technique.

Subject Areas: Electronic devices & materials [TJFD]