Doping Engineering for Front-End Processing: Volume 1070

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

B. J. Pawlak (Edited by), M. L. Pelaz (Edited by), M. Law (Edited by), K. Surugo (Edited by)

9781107408548, Cambridge University Press

Paperback / softback, published 5 June 2014

336 pages
22.9 x 15.2 x 1.8 cm, 0.45 kg

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Preface
Part I. Ultra Shallow Junctions I
Part II. Shallow Junction Contacting
Part III. Poster Session
Part IV. Ultra Shallow Junctions II
Part V. Solid Phase Epitaxial Regrowth
Part VI. Modeling and Simulation
Author index
Subject index.

Subject Areas: Materials science [TGM]