Delta-doping of Semiconductors

A comprehensive review of the theory and application of delta-doping of semiconductors.

E. F. Schubert (Edited by)

9780521017961, Cambridge University Press

Paperback, published 22 August 2005

620 pages, 417 b/w illus. 20 tables
24.7 x 19 x 3.1 cm, 1.081 kg

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Part I: 1. Introduction E. F. Schubert
Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto
Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog
4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi
5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter
6. Solid phase epitaxy for delta-doping in silicon I. Eisele
7. Low temperature MBE of silicon H.-J. Gossmann
Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann
9. Capacitance-voltage profiling E. F. Schubert
10. Redistribution of impurities in III-V semiconductors E. F. Schubert
11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann
12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman
13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad
Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert
15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards
16. Electron transport in delta-doped quantum wells W. T. Masselink
17. Electron mobility in delta-doped layers P. M. Koenraad
18. Hot electrons in delta-doped GaAs M. Asche
19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir
Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong
21. Selectively doped heterostructure devices E. F. Schubert
22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi
23. Planar doped barrier devices R. J. Malik
24. Silicon interband and intersubband photodetectors I. Eisele
25. Doping superlattice devices E. F. Schubert.

Subject Areas: Condensed matter physics [liquid state & solid state physics PHFC]