CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Alexander A. Demkov (Edited by), Bill Taylor (Edited by), H. Rusty Harris (Edited by), Jeffery W. Butterbaugh (Edited by), Willy Rachmady (Edited by)

9781605111285, Cambridge University Press

Hardback, published 19 November 2009

194 pages
23.6 x 16 x 1.4 cm, 0.43 kg

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Subject Areas: Materials science [TGM]