Chemical-Mechanical Polishing – Fundamentals and Challenges: Volume 566

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

S. V. Babu (Edited by), S. Danyluk (Edited by), M. Krishnan (Edited by), M. Tsujimura (Edited by)

9781558994737, Cambridge University Press

Hardback, published 10 February 2000

281 pages
23.4 x 15.7 x 2.3 cm, 0.591 kg

Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.

Part I. Overview and Oxide Polishing
Part II. Pads and Related Issues
Part III. Metal Polishing - W and AI
Part IV. Copper Polishing and Related Issues
Part V. CMP Modeling and Fluid Flow
Part VI. Particle Adhesion and Post-polish Cleaning
Author index
Subject index.

Subject Areas: Semi-conductors & super-conductors [TJFD5], Materials science [TGM]