Chemical Beam Epitaxy and Related Techniques

John S. Foord (Edited by), JS Foord (Author), G. J. Davies (Edited by), W. T. Tsang (Edited by)

9780471967484, Wiley

Hardback, published 6 June 1997

464 pages
24 x 15.8 x 3 cm, 0.85 kg

Die Strahlepitaxie (Chemical Beam Epitaxy) ist eine relativ neue Methode der Herstellung von Halbleiterschichten. Hier erfahren Sie alles Wichtige rund um dieses Verfahren: Ausrüstung, chemische Mechanismen, Eigenschaften verschiedener Halbleitermaterialien. Für Interessenten aus Physik, Elektronik und Elektrotechnik.

Chemical Beam Epitaxy: An Introduction (G. Davies, et al.).

Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol).

Precursors for Chemical Beam Epitaxy (D. Bohling).

Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord).

Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy).

CBE InP-Based Materials and Devices (W. Tsang & T. Chiu).

MOMBE of Antiminides and Growth Model (H. Asahi).

Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa).

Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki).

Gas Source Molecular Beam Epitaxy (L. Goldstein).

Dopants and Dopant Incorporation (T. Whitaker & T. Martin).

Selected Area Epitaxy (H. Heinecke & G. Davies).

Chemical Beam Etching (W. Tsang & T. Chiu).

Laser-Assisted Epitaxy (H. Sugiura).

Index.

Subject Areas: Chemistry [PN]