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Advances in Chemical Mechanical Planarization (CMP)
Provides a presentation of the fundamentals and advances in CMP and the latest techniques in chemical mechanical planarization
Babu Suryadevara (Edited by)
9780128217917
Paperback, published 16 September 2021
648 pages, 200 illustrations (150 in full color)
22.9 x 15.2 x 4 cm, 1 kg
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D.
Part One - CMP of dielectric and metal films 1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP) 2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond 3. Electrochemical techniques and their applications for CMP of metal films 4. Ultra-low-k materials and chemical mechanical planarization (CMP) 5. CMP processing of high mobility channel materials - alternatives to Sis 6. Multiscale modeling of chemical mechanical planarization (CMP) 7. Polishing of SiC films 8. Chemical and physical mechanisms of CMP of gallium nitride 9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes 10. Transient copper removal rate phenomena with implications for polishing mechanisms 11. Environmental aspects of planarization processes Part Two - Consumables and process control for improved CMP 12. Preparation and characterization of slurry for CMP 13. Chemical metrology methods for CMP quality 14. Diamond disc pad conditioning in chemical mechanical polishing 15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy 16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters 17. Approaches to defect characterization, mitigation and reduction 18. Challenges and solutions for post-CMP cleaning at device and interconnect levels 19. Applications of chemical mechanical planarization (CMP) to More than Moore devices 20. CMP for phase change materials 21. CMP pads and their performance 22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning
Subject Areas: Applied optics [TTB], Electronic devices & materials [TJFD], Electronics & communications engineering [TJ], Materials science [TGM]
