{"product_id":"vlsi-fabrication-principles-silicon-and-gallium-arsenide-hardback-9780471580058","title":"VLSI Fabrication Principles; Silicon and Gallium Arsenide (Hardback) 9780471580058","description":"\u003cfont face=\"Georgia\"\u003e\r\n\u003cp\u003e\u003cfont size=\"6\"\u003eVLSI Fabrication Principles\u003c\/font\u003e\u003cbr\u003e\r\n\u003cfont size=\"5\"\u003eSilicon and Gallium Arsenide\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\r\n\u003cp\u003e\u003cfont size=\"4\"\u003eSorab K. Ghandhi (Author)\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e9780471580058, Wiley\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eHardback, published 22 April 1994\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e864 pages\u003cbr\u003e24 x 16.4 x 4.4 cm, 1.308 kg\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003cp align=\"justify\"\u003e\u003cstrong\u003e\u003cfont size=\"3\"\u003e\u003cp\u003e\u003cb\u003e\u003ci\u003eVLSI Fabrication Principles: Silicon and Gallium Arsenide,\u003c\/i\u003e 2nd Edition\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eFully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits.\u003c\/p\u003e\u003c\/font\u003e\u003c\/strong\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e\u003cp\u003e\u003cb\u003e1 Material Properties 1\u003c\/b\u003e\u003cbr\u003e\u003cbr\u003e1.1 Physical Properties 3\u003cbr\u003e\u003cbr\u003e1.2 Crystal Structure 13\u003cbr\u003e\u003cbr\u003e1.3 Crystal Axes and Planes 16\u003cbr\u003e\u003cbr\u003e1.4 Orientation Effects 19\u003cbr\u003e\u003cbr\u003e1.5 Point Defects 23\u003cbr\u003e\u003cbr\u003e1.6 Dislocations 45\u003cbr\u003e\u003cbr\u003e1.7 Electronic Properties of Defects 53\u003c\/p\u003e \u003cp\u003eTables 58\u003cbr\u003e\u003cbr\u003eReferences 64\u003cbr\u003e\u003cbr\u003eProblems 67\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 Phase Diagrams and Solid Solubility 69\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1 Unitary Diagrams 70\u003cbr\u003e\u003cbr\u003e2.2 Binary Diagrams 70\u003cbr\u003e\u003cbr\u003e2.3 Solid Solubility 88\u003cbr\u003e\u003cbr\u003e2.4 Ternary Diagram 91\u003c\/p\u003e \u003cp\u003eReferences 99\u003cbr\u003e\u003cbr\u003eProblem 100\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 Crystal Growth and Doping 102\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e3.1 Starting Growth and Doping 102\u003c\/p\u003e \u003cp\u003e3.2 Growth from the Melt 106\u003c\/p\u003e \u003cp\u003e3.3 Considerations for Proper Crystal Growth 113\u003c\/p\u003e \u003cp\u003e3.4 Doping in the Melt 120\u003c\/p\u003e \u003cp\u003e3.5 Semi-Insulating Gallium Arsenide 129\u003c\/p\u003e \u003cp\u003e3.6 Properties of Melt-Grown Crystals 132\u003c\/p\u003e \u003cp\u003e3.7 Solution Growth 134\u003c\/p\u003e \u003cp\u003e3.8 Zone Processes 135\u003c\/p\u003e \u003cp\u003e3.9 Properties of Zone-Processed Crystals 141\u003c\/p\u003e \u003cp\u003eTables 142\u003cbr\u003e\u003cbr\u003eReferences 145\u003cbr\u003e\u003cbr\u003eProblems 149\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 Diffusion 150\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1 The Nature of Diffusion 151\u003cbr\u003e\u003cbr\u003e4.2 Diffusion in a Concentration Gradient 154\u003cbr\u003e\u003cbr\u003e4.3 The Diffusion Equation 171\u003cbr\u003e\u003cbr\u003e4.4 Impurity Behavior: Silicon 183\u003cbr\u003e\u003cbr\u003e4.5 Impurity Behavior: Gallium Arsenide 197\u003cbr\u003e\u003cbr\u003e4.6 Diffusion Systems 202\u003cbr\u003e\u003cbr\u003e4.7 Diffusion Systems for Silicon 209\u003cbr\u003e\u003cbr\u003e4.8 Special Problems in Silicon Diffusion 217\u003cbr\u003e\u003cbr\u003e4.9 Diffusion Systems for Gallium Arsenide 224\u003cbr\u003e\u003cbr\u003e4.10 Evaluation Techniques for Diffused Layers 235\u003c\/p\u003e \u003cp\u003eTables 246\u003cbr\u003e\u003cbr\u003eReferences 251\u003cbr\u003e\u003cbr\u003eProblems 256\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Epitaxy 258\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1 General Considerations 261\u003cbr\u003e\u003cbr\u003e5.2 Molecular Beam Epitaxy 273\u003cbr\u003e\u003cbr\u003e5.3 Vapor-Phase Epitaxy 283\u003cbr\u003e\u003cbr\u003e5.4 VPE Processes for Silicon 296\u003cbr\u003e\u003cbr\u003e5.5 VPE Processes for Gallium Arsenide 313\u003cbr\u003e\u003cbr\u003e5.6 Liquid-Phase Epitaxy 330\u003cbr\u003e\u003cbr\u003e5.7 LPE Systems 340\u003cbr\u003e\u003cbr\u003e5.8 Heteroepitaxy 345\u003cbr\u003e\u003cbr\u003e5.9 Evaluation of Epitaxial Layers 348\u003c\/p\u003e \u003cp\u003eTables 356\u003cbr\u003e\u003cbr\u003eReferences 358\u003cbr\u003e\u003cbr\u003eProblems 366\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 Ion Implantation 368\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1 Penetration Range 370\u003cbr\u003e\u003cbr\u003e6.2 Implantation Damage 389\u003cbr\u003e\u003cbr\u003e6.3 Annealing 393\u003cbr\u003e\u003cbr\u003e6.4 Ion Implantation Systems 407\u003cbr\u003e\u003cbr\u003e6.5 Process Considerations 416\u003cbr\u003e\u003cbr\u003e6.6 High-Energy Implants 430\u003cbr\u003e\u003cbr\u003e6.7 High-Current Implants 431\u003cbr\u003e\u003cbr\u003e6.8 Application to Silicon 432\u003cbr\u003e\u003cbr\u003e6.9 Application to Gallium Arsenide 437\u003c\/p\u003e \u003cp\u003eTables 442\u003cbr\u003e\u003cbr\u003eReferences 443\u003cbr\u003e\u003cbr\u003eProblems 449\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7 Native Films 451\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e7.1 Thermal Oxidation of Silicon 452\u003cbr\u003e\u003cbr\u003e7.2 Thermal Nitridation of Silicon 483\u003cbr\u003e\u003cbr\u003e7.3 Thermal Oxidation of Gallium Arsenide 485\u003cbr\u003e\u003cbr\u003e7.4 Anodic Oxidation 487\u003cbr\u003e\u003cbr\u003e7.5 Plasma Processes 495\u003cbr\u003e\u003cbr\u003e7.6 Evaluation of Native Films 498\u003c\/p\u003e \u003cp\u003eTables 500\u003cbr\u003e\u003cbr\u003eReferences 503\u003cbr\u003e\u003cbr\u003eProblems 508\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8 Deposited Films 510\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e8.1 Film Deposition Methods 511\u003cbr\u003e\u003cbr\u003e8.2 Film Characteristics 522\u003cbr\u003e\u003cbr\u003e8.3 Films for Protection and Masking 527\u003cbr\u003e\u003cbr\u003e8.4 Films for Doping 546\u003cbr\u003e\u003cbr\u003e8.5 Films for Interconnections 548\u003cbr\u003e\u003cbr\u003e8.6 Films for Ohmic Contacts 556\u003cbr\u003e\u003cbr\u003e8.7 Films for Schottky Diodes 570\u003c\/p\u003e \u003cp\u003eTables 576\u003cbr\u003e\u003cbr\u003eReferences 578\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9 Etching and Cleaning 587\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e9.1 Wet Chemical Etching 589\u003cbr\u003e\u003cbr\u003e9.2 Dry Physical Etching 613\u003cbr\u003e\u003cbr\u003e9.3 Dry Chemical Etching 620\u003cbr\u003e\u003cbr\u003e9.4 Reactive Ion Etching 625\u003cbr\u003e\u003cbr\u003e9.5 Chemically Assisted Ion Beam Techniques 636\u003cbr\u003e\u003cbr\u003e9.6 Etching-Induced Damage 638\u003cbr\u003e\u003cbr\u003e9.7 Cleaning 639\u003c\/p\u003e \u003cp\u003eTables 646\u003cbr\u003e\u003cbr\u003eReferences 654\u003cbr\u003e\u003cbr\u003eProblems 661\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10 Lithographic Processes 662\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e10.1 Photoreactive Materials 664\u003cbr\u003e\u003cbr\u003e10.2 Pattern Generation and Mask-Making 669\u003cbr\u003e\u003cbr\u003e10.3 Pattern Transfer 674\u003cbr\u003e\u003cbr\u003e10.4 Advanced Techniques 685\u003cbr\u003e\u003cbr\u003e10.5 Problem Areas 696\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11 Device and Circuit Fabrication 704\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e11.1 Isolation 705\u003cbr\u003e\u003cbr\u003e11.2 Self-Alignment 712\u003cbr\u003e\u003cbr\u003e11.3 Local Oxidation 714\u003cbr\u003e\u003cbr\u003e11.4 Planarization 721\u003cbr\u003e\u003cbr\u003e11.5 Metallization 726\u003cbr\u003e\u003cbr\u003e11.6 Gettering 728\u003cbr\u003e\u003cbr\u003e11.7 Mos-Based Silicon Microcircuits 730\u003cbr\u003e\u003cbr\u003e11.8 BJT-Based Silicon Microcircuits 749\u003cbr\u003e\u003cbr\u003e11.9 Gallium Arsenide Microcircuits 778\u003c\/p\u003e \u003cp\u003eTables 790\u003cbr\u003e\u003cbr\u003eReferences 790\u003c\/p\u003e \u003cp\u003e\u003cb\u003eAppendix The Mathematics of Diffusion 801\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eA.1 Solutions for a Constant Diffusion Coefficient 802\u003cbr\u003e\u003cbr\u003eA.2 Solution for a Time-Dependent Diffusion Coefficient 811\u003cbr\u003e\u003cbr\u003eA.3 Solution for Concentration-Dependent Diffusion Coefficients 813\u003cbr\u003e\u003cbr\u003eA.4 Determination of the Diffusion Constant 815\u003c\/p\u003e \u003cp\u003eReferences 817\u003cbr\u003e\u003cbr\u003eIndex 819\u003c\/p\u003e\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eSubject Areas: Electronics \u0026amp; communications engineering [\u003ca title=\"See our other books on Electronics \u0026amp; communications engineering\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Electronics%20\u0026amp;%20communications%20engineering%20%5BTJ%5D%22\"\u003eTJ\u003c\/a\u003e]\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003c\/font\u003e","brand":"Wiley-Interscience","offers":[{"title":"Brand New","offer_id":52297995682072,"sku":"9780471580058","price":126.49,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0730\/2037\/5320\/files\/9780471580058.jpg?v=1781730335","url":"https:\/\/freshlyprintedbooks.co.uk\/products\/vlsi-fabrication-principles-silicon-and-gallium-arsenide-hardback-9780471580058","provider":"Freshly Printed Books","version":"1.0","type":"link"}