{"product_id":"transistor-scaling-volume-913-methods-materials-and-modeling-hardback-9781558998698","title":"Transistor Scaling: Volume 913; Methods, Materials and Modeling (Hardback) 9781558998698","description":"\u003cfont face=\"Georgia\"\u003e\r\n\u003cp\u003e\u003cfont size=\"6\"\u003eTransistor Scaling: Volume 913\u003c\/font\u003e\u003cbr\u003e\r\n\u003cfont size=\"5\"\u003eMethods, Materials and Modeling\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cem\u003eThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.\u003c\/em\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003cp\u003e\u003cfont size=\"4\"\u003eScott Thompson (Edited by), Faran Nouri (Edited by), Wen-Chin Lee (Edited by), Wilman Tsai (Edited by)\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e9781558998698, Cambridge University Press\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eHardback, published 7 November 2006\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e205 pages\u003cbr\u003e28 x 19 x 2 cm, 0.432 kg\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003cp align=\"justify\"\u003e\u003cstrong\u003e\u003cfont size=\"3\"\u003eFor the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density - Moore's Law - but also a corresponding enhancement in the transistor performance.  Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector.  Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured\u003c\/font\u003e\u003c\/strong\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eSubject Areas: Transistors [\u003ca title=\"See our other books on Transistors\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Transistors%20%5BTJFD3%5D%22\"\u003eTJFD3\u003c\/a\u003e], Materials science [\u003ca title=\"See our other books on Materials science\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Materials%20science%20%5BTGM%5D%22\"\u003eTGM\u003c\/a\u003e]\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003c\/font\u003e","brand":"Cambridge University Press","offers":[{"title":"Default Title","offer_id":46266502578456,"sku":"9781558998698","price":33.99,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0730\/2037\/5320\/products\/9781558998698i.jpg?v=1696684082","url":"https:\/\/freshlyprintedbooks.co.uk\/products\/transistor-scaling-volume-913-methods-materials-and-modeling-hardback-9781558998698","provider":"Freshly Printed Books","version":"1.0","type":"link"}