{"product_id":"theory-of-modern-electronic-semiconductor-devices-hardback-9780471415411","title":"Theory of Modern Electronic Semiconductor Devices (Hardback) 9780471415411","description":"\u003cfont face=\"Georgia\"\u003e\r\n\u003cp\u003e\u003cfont size=\"6\"\u003eTheory of Modern Electronic Semiconductor Devices\u003c\/font\u003e\u003cbr\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003c\/p\u003e\n\u003cp\u003e\u003cfont size=\"4\"\u003eKevin F. Brennan (Author), April S. Brown (Author)\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e9780471415411, Wiley\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eHardback, published 14 March 2002\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e464 pages\u003cbr\u003e24.1 x 16 x 2.5 cm, 0.767 kg\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\u003cp align=\"justify\"\u003e\u003cem\u003e\u003cfont size=\"3\"\u003e\"A discussion of important emerging technologies and trends in semiconductor devices...\" SciTech Book News\u003cbr\u003e\u003c\/font\u003e\u003c\/em\u003e\u003c\/p\u003e\r\n\r\n\u003cp align=\"justify\"\u003e\u003cstrong\u003e\u003cfont size=\"3\"\u003eHier werden Halbleiterbauelemente vorgestellt, die in Mobilkommunikationssystemen, in Computern und vielen anderen High-Tech-Geräten verwendet werden. Das ausgezeichnete Handbuch für Ingenieure und andere Praktiker ist auch für Studenten interessant, denn die physikalische und ingenieurtechnische Prinzipien aller Bauelemente werden ausführlich erläutert.\u003c\/font\u003e\u003c\/strong\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003ePREFACE.\u003cbr\u003e \u003cbr\u003e 1 OVERVIEW OF SEMICONDUCTOR DEVICE TRENDS.\u003cbr\u003e \u003cbr\u003e 1.1 Moore's Law and Its Implications.\u003cbr\u003e \u003cbr\u003e 1.2 Semiconductor Devices for Telecommunications.\u003cbr\u003e \u003cbr\u003e 1.3 Digital Communications.\u003cbr\u003e \u003cbr\u003e 2 SEMICONDUCTOR HETEROSTRUCTURES.\u003cbr\u003e \u003cbr\u003e 2.1 Formation of Heterostructures.\u003cbr\u003e \u003cbr\u003e 2.2 Modulation Doping.\u003cbr\u003e \u003cbr\u003e 2.3 Two-Dimensional Subband Transport at Heterointerfaces.\u003cbr\u003e \u003cbr\u003e 2.4 Strain and Stress at Heterointerfaces.\u003cbr\u003e \u003cbr\u003e 2.5 Perpendicular Transport in Heterostructures and Superlattices.\u003cbr\u003e \u003cbr\u003e 2.6 Heterojunction Materials Systems: Intrinsic and Extrinsic Properties.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 3 HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS.\u003cbr\u003e \u003cbr\u003e 3.1 Motivation.\u003cbr\u003e \u003cbr\u003e 3.2 Basics of Heterostructure Field-Effect Transistors.\u003cbr\u003e \u003cbr\u003e 3.3 Simplified Long-Channel Model of a MODFET.\u003cbr\u003e \u003cbr\u003e 3.4 Physical Features of Advanced State-of-the-Art MODFETs.\u003cbr\u003e \u003cbr\u003e 3.5 High-Frequency Performance of MODFETs.\u003cbr\u003e \u003cbr\u003e 3.6 Materials Properties and Structure Optimization for HFETs.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 4 HETEROSTRUCTURE BIPOLAR TRANSISTORS.\u003cbr\u003e \u003cbr\u003e 4.1 Review of Bipolar Junction Transistors.\u003cbr\u003e \u003cbr\u003e 4.2 Emitter-Base Heterojunction Bipolar Transistors.\u003cbr\u003e \u003cbr\u003e 4.3 Base Transport Dynamics.\u003cbr\u003e \u003cbr\u003e 4.4 Nonstationary Transport Effects and Breakdown.\u003cbr\u003e \u003cbr\u003e 4.5 High-Frequency Performance of HBTs.\u003cbr\u003e \u003cbr\u003e 4.6 Materials Properties and Structure Optimization for HBTs .\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 5 TRANSFERRED ELECTRON EFFECTS, NEGATIVE DIFFERENTIAL RESISTANCE, AND DEVICES.\u003cbr\u003e \u003cbr\u003e 5.1 Introduction.\u003cbr\u003e \u003cbr\u003e 5.2 k-Space Transfer.\u003cbr\u003e \u003cbr\u003e 5.3 Real-Space Transfer.\u003cbr\u003e \u003cbr\u003e 5.4 Consequences of NDR in a Semiconductor.\u003cbr\u003e \u003cbr\u003e 5.5 Transferred Electron-Effect Oscillators: Gunn Diodes.\u003cbr\u003e \u003cbr\u003e 5.6 Negative Differential Resistance Transistors.\u003cbr\u003e \u003cbr\u003e 5.7 IMPATT Diodes.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 6 RESONANT TUNNELING AND DEVICES.\u003cbr\u003e \u003cbr\u003e 6.1 Physics of Resonant Tunneling: Qualitative Approach.\u003cbr\u003e \u003cbr\u003e 6.2 Physics of Resonant Tunneling: Envelope Approximation.\u003cbr\u003e \u003cbr\u003e 6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping Conduction.\u003cbr\u003e \u003cbr\u003e 6.4 Resonant Tunneling Diodes: High-Frequency Applications.\u003cbr\u003e \u003cbr\u003e 6.5 Resonant Tunneling Diodes: Digital Applications.\u003cbr\u003e \u003cbr\u003e 6.6 Resonant Tunneling Transistors.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 7 CMOS: DEVICES AND FUTURE CHALLENGES.\u003cbr\u003e \u003cbr\u003e 7.1 Why CMOS?\u003cbr\u003e \u003cbr\u003e 7.2 Basics of Long-Channel MOSFET Operation.\u003cbr\u003e \u003cbr\u003e 7.3 Short-Channel Effects.\u003cbr\u003e \u003cbr\u003e 7.4 Scaling Theory.\u003cbr\u003e \u003cbr\u003e 7.5 Processing Limitations to Continued Miniaturization.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 8 BEYOND CMOS: FUTURE APPROACHES TO COMPUTING HARDWARE.\u003cbr\u003e \u003cbr\u003e 8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs, and SiGe.\u003cbr\u003e \u003cbr\u003e 8.2 Quantum-Dot Devices and Cellular Automata.\u003cbr\u003e \u003cbr\u003e 8.3 Molecular Computing.\u003cbr\u003e \u003cbr\u003e 8.4 Field-Programmable Gate Arrays and Defect-Tolerant Computing.\u003cbr\u003e \u003cbr\u003e 8.5 Coulomb Blockade and Single-Electron Transistors.\u003cbr\u003e \u003cbr\u003e 8.6 Quantum Computing.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e 9 MAGNETIC FIELD EFFECTS IN SEMICONDUCTORS.\u003cbr\u003e \u003cbr\u003e 9.1 Landau Levels.\u003cbr\u003e \u003cbr\u003e 9.2 Classical Hall Effect.\u003cbr\u003e \u003cbr\u003e 9.3 Integer Quantum Hall Effect.\u003cbr\u003e \u003cbr\u003e 9.4 Fractional Quantum Hall Effect.\u003cbr\u003e \u003cbr\u003e 9.5 Shubnikov-de Haas Oscillations.\u003cbr\u003e \u003cbr\u003e Problems.\u003cbr\u003e \u003cbr\u003e REFERENCES.\u003cbr\u003e \u003cbr\u003e APPENDIX A: PHYSICAL CONSTANTS.\u003cbr\u003e \u003cbr\u003e APPENDIX B: BULK MATERIAL PARAMETERS.\u003cbr\u003e \u003cbr\u003e Table I: Silicon.\u003cbr\u003e \u003cbr\u003e Table II: Ge.\u003cbr\u003e \u003cbr\u003e Table III: GaAs.\u003cbr\u003e \u003cbr\u003e Table IV: InP.\u003cbr\u003e \u003cbr\u003e Table V: InAs.\u003cbr\u003e \u003cbr\u003e Table VI: InN.\u003cbr\u003e \u003cbr\u003e Table VII: GaN.\u003cbr\u003e \u003cbr\u003e Table VIII: SiC.\u003cbr\u003e \u003cbr\u003e Table IX: ZnS.\u003cbr\u003e \u003cbr\u003e Table X: ZnSe.\u003cbr\u003e \u003cbr\u003e Table XI : Al x Ga 1 fx As.\u003cbr\u003e \u003cbr\u003e Table XI I : Ga 0:47 In 0:53 As.\u003cbr\u003e \u003cbr\u003e Table XIII: Al 0:48 In 0:52 As.\u003cbr\u003e \u003cbr\u003e Table XI V: Ga 0:5 In 0:5 P.\u003cbr\u003e \u003cbr\u003e Table XV: Hg 0:70 Cd 0:30 Te.\u003cbr\u003e \u003cbr\u003e APPENDIX C: HETEROJUNCTION PROPERTIES.\u003cbr\u003e \u003cbr\u003e INDEX.\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eSubject Areas: Electronics \u0026amp; communications engineering [\u003ca title=\"See our other books on Electronics \u0026amp; communications engineering\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Electronics%20\u0026amp;%20communications%20engineering%20%5BTJ%5D%22\"\u003eTJ\u003c\/a\u003e]\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003c\/font\u003e","brand":"Wiley-Interscience","offers":[{"title":"Brand New","offer_id":52293471437080,"sku":"9780471415411","price":110.99,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0730\/2037\/5320\/files\/9780471415411.jpg?v=1781640906","url":"https:\/\/freshlyprintedbooks.co.uk\/products\/theory-of-modern-electronic-semiconductor-devices-hardback-9780471415411","provider":"Freshly Printed Books","version":"1.0","type":"link"}