{"product_id":"silicon-germanium-sige-nanostructures-production-properties-and-applications-in-electronics-paperback-9780081017395","title":"Silicon-Germanium (SiGe) Nanostructures; Production, Properties and Applications in Electronics (Paperback \/ softback) 9780081017395","description":"\u003cfont face=\"Georgia\"\u003e\r\n\u003cp\u003e\u003cfont size=\"6\"\u003eSilicon-Germanium (SiGe) Nanostructures\u003c\/font\u003e\u003cbr\u003e\r\n\u003cfont size=\"5\"\u003eProduction, Properties and Applications in Electronics\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\r\n\u003cp\u003e\u003cfont size=\"4\"\u003eY. Shiraki (Edited by), N Usami (Edited by)\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e9780081017395, Elsevier Science\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003ePaperback \/ softback, published 19 August 2016\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e656 pages\u003cbr\u003e23.3 x 15.6 x 4 cm, 0.9 kg\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\u003cp align=\"justify\"\u003e\u003cem\u003e\u003cfont size=\"3\"\u003e\"This book represents a considerable collaborative state of the art review of SiGe current developments and nanostructures in electronic devices.\" \u003cb\u003e--Materials World\u003c\/b\u003e\u003c\/font\u003e\u003c\/em\u003e\u003c\/p\u003e\r\n\r\n\u003cp align=\"justify\"\u003e\u003cstrong\u003e\u003cfont size=\"3\"\u003eNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.\u003c\/font\u003e\u003c\/strong\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e\u003cp\u003eContributor contact details\u003c\/p\u003e \u003cp\u003ePreface\u003c\/p\u003e \u003cp\u003ePart I: Introduction\u003c\/p\u003e \u003cp\u003eChapter 1: Structural properties of silicon–germanium (SiGe) nanostructures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e1.1 Introduction\u003c\/p\u003e \u003cp\u003e1.2 Crystal structure\u003c\/p\u003e \u003cp\u003e1.3 Lattice parameters\u003c\/p\u003e \u003cp\u003e1.4 Phase diagram\u003c\/p\u003e \u003cp\u003e1.5 Critical thickness\u003c\/p\u003e \u003cp\u003e1.6 Structural characterization by X-ray diffraction\u003c\/p\u003e \u003cp\u003e1.7 Future trends\u003c\/p\u003e \u003cp\u003e1.8 Acknowledgement\u003c\/p\u003e \u003cp\u003eChapter 2: Electronic band structures of silicon–germanium (SiGe) alloys\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e2.1 Band structures\u003c\/p\u003e \u003cp\u003e2.2 Strain effects\u003c\/p\u003e \u003cp\u003e2.3 Effective mass\u003c\/p\u003e \u003cp\u003e2.4 Conclusion\u003c\/p\u003e \u003cp\u003ePart II: Formation of nanostructures\u003c\/p\u003e \u003cp\u003eChapter 3: Understanding crystal growth mechanisms in silicon–germanium (SiGe) nanostructures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e3.1 Introduction\u003c\/p\u003e \u003cp\u003e3.2 Thermodynamics of crystal growth\u003c\/p\u003e \u003cp\u003e3.3 Fundamental growth processes\u003c\/p\u003e \u003cp\u003e3.4 Kinetics of epitaxial growth\u003c\/p\u003e \u003cp\u003e3.5 Heteroepitaxy\u003c\/p\u003e \u003cp\u003eChapter 4: Types of silicon–germanium (SiGe) bulk crystal growth methods and their applications\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e4.1 Introduction\u003c\/p\u003e \u003cp\u003e4.2 Growth methods\u003c\/p\u003e \u003cp\u003e4.3 Application of silicon–germanium (SiGe) bulk crystal to heteroepitaxy\u003c\/p\u003e \u003cp\u003e4.4 Conclusion\u003c\/p\u003e \u003cp\u003eChapter 5: Silicon–germanium (SiGe) crystal growth using molecular beam epitaxy\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e5.1 Introduction\u003c\/p\u003e \u003cp\u003e5.2 Techniques\u003c\/p\u003e \u003cp\u003e5.3 Nanostructure formation by molecular bean epitaxy (MBE)\u003c\/p\u003e \u003cp\u003e5.4 Future trends\u003c\/p\u003e \u003cp\u003eChapter 6: Silicon–germanium (SiGe) crystal growth using chemical vapor deposition\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e6.1 Introduction\u003c\/p\u003e \u003cp\u003e6.2 Epitaxial growth techniques – chemical vapor deposition (CVD) (ultra high vacuum CVD (UHVCVD), low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), plasma enhanced CVD (PECVD))\u003c\/p\u003e \u003cp\u003e6.3 Silicon–germanium (SiGe) heteroepitaxy by chemical vapor deposition (CVD)\u003c\/p\u003e \u003cp\u003e6.4 Doping of silicon–germanium (SiGe)\u003c\/p\u003e \u003cp\u003e6.5 Conclusion and future trends\u003c\/p\u003e \u003cp\u003eChapter 7: Strain engineering of silicon–germanium (SiGe) virtual substrates\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e7.1 Introduction\u003c\/p\u003e \u003cp\u003e7.2 Compositionally graded buffer\u003c\/p\u003e \u003cp\u003e7.3 Low-temperature buffer\u003c\/p\u003e \u003cp\u003e7.4 Ion-implantation buffer\u003c\/p\u003e \u003cp\u003e7.5 Other methods and future trends\u003c\/p\u003e \u003cp\u003eChapter 8: Formation of silicon–germanium on insulator (SGOI) substrates\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e8.1 Introduction: demand for virtual substrate and (Si)Ge on insulator (SGOI)\u003c\/p\u003e \u003cp\u003e8.2 Formation of (Si)Ge on insulator (SGOI) by the Ge condensation method\u003c\/p\u003e \u003cp\u003e8.3 Extension toward Ge on insulator\u003c\/p\u003e \u003cp\u003e8.4 Conclusion\u003c\/p\u003e \u003cp\u003e8.5 Acknowledgment\u003c\/p\u003e \u003cp\u003eChapter 9: Miscellaneous methods and materials for silicon–germanium (SiGe) based heterostructures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e9.1 Introduction\u003c\/p\u003e \u003cp\u003e9.2 Oriented growth of silicon-germanium (SiGe)on insulating films for thin film transistors and 3-D stacked devices\u003c\/p\u003e \u003cp\u003e9.3 Heteroepitaxial growth of ferromagnetic Heusler alloys for silicon-germanium (SiGe)-based spintronic devices\u003c\/p\u003e \u003cp\u003e9.4 Conclusion\u003c\/p\u003e \u003cp\u003eChapter 10: Modeling the evolution of germanium islands on silicon(001) thin films\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e10.1 A few considerations on epitaxial growth modeling\u003c\/p\u003e \u003cp\u003e10.2 Introduction to Stranski–Krastanow (SK) heteroepitaxy\u003c\/p\u003e \u003cp\u003e10.3 Onset of Stranski–Krastanow (SK) heteroepitaxy\u003c\/p\u003e \u003cp\u003e10.4 Beyond the Stranski–Krastranow (SK) onset: SiGe intermixing\u003c\/p\u003e \u003cp\u003e10.5 Beyond the Stranski–Krastanow (SK) onset: vertical and horizontal ordering for applications\u003c\/p\u003e \u003cp\u003e10.6 Future trends: ordering Ge islands on pit-patterned Si(001)\u003c\/p\u003e \u003cp\u003eChapter 11: Strain engineering of silicon–germanium (SiGe) micro- and nanostructures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e11.1 Introduction\u003c\/p\u003e \u003cp\u003e11.2 Growth insights\u003c\/p\u003e \u003cp\u003e11.3 Island engineering\u003c\/p\u003e \u003cp\u003e11.4 Rolled-up nanotechnology\u003c\/p\u003e \u003cp\u003e11.5 Potential applications\u003c\/p\u003e \u003cp\u003e11.6 Sources of further information and advice\u003c\/p\u003e \u003cp\u003e11.7 Acknowledgments\u003c\/p\u003e \u003cp\u003ePart III: Material properties of SiGe nanostructures\u003c\/p\u003e \u003cp\u003eChapter 12: Self-diffusion and dopant diffusion in germanium (Ge) and silicon–germanium (SiGe) alloys\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e12.1 Introduction\u003c\/p\u003e \u003cp\u003e12.2 Diffusion mechanism\u003c\/p\u003e \u003cp\u003e12.3 Self-diffusion in germanium (Ge)\u003c\/p\u003e \u003cp\u003e12.4 Self-diffusion in silicon–germanium (SiGe) alloys\u003c\/p\u003e \u003cp\u003e12.5 Silicon-germanium (Si–Ge) interdiffusion\u003c\/p\u003e \u003cp\u003e12.6 Dopant diffusion in germanium (Ge)\u003c\/p\u003e \u003cp\u003e12.7 Dopant diffusion in silicon–germanium (SiGe) alloys\u003c\/p\u003e \u003cp\u003e12.8 Dopant segregation\u003c\/p\u003e \u003cp\u003e12.9 Conclusion and future trends\u003c\/p\u003e \u003cp\u003eChapter 13: Dislocations and other strain-induced defects in silicon–germanium (SiGe) nanostructures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e13.1 Introduction and background\u003c\/p\u003e \u003cp\u003e13.2 Historical overview\u003c\/p\u003e \u003cp\u003e13.3 Application of the Thompson tetrahedron to extended defects in silicon–germanium (SiGe)\u003c\/p\u003e \u003cp\u003e13.4 Current topics\u003c\/p\u003e \u003cp\u003e13.5 Future trends\u003c\/p\u003e \u003cp\u003e13.6 Acknowledgments\u003c\/p\u003e \u003cp\u003eChapter 14: Transport properties of silicon\/silicon–germanium (Si\/SiGe) nanostructures at low temperatures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e14.1 Introduction\u003c\/p\u003e \u003cp\u003e14.2 Model, disorder and transport theory\u003c\/p\u003e \u003cp\u003e14.3 Transport in quantum wells\u003c\/p\u003e \u003cp\u003e14.4 Transport in heterostructures\u003c\/p\u003e \u003cp\u003e14.5 Comparison with experimental results\u003c\/p\u003e \u003cp\u003e14.6 Discussion and future trends\u003c\/p\u003e \u003cp\u003e14.7 Conclusions\u003c\/p\u003e \u003cp\u003e14.8 Acknowledgements\u003c\/p\u003e \u003cp\u003eChapter 15: Transport properties of silicon–germanium (SiGe) nanostructures and applications in devices\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e15.1 Introduction\u003c\/p\u003e \u003cp\u003e15.2 Basic transport properties of strained silicon–germanium (SiGe) heterostructures\u003c\/p\u003e \u003cp\u003e15.3 Strain engineering\u003c\/p\u003e \u003cp\u003e15.4 Low-dimensional transport\u003c\/p\u003e \u003cp\u003e15.5 Carrier transport in silicon\/silicon–germanium (Si\/SiGe) devices\u003c\/p\u003e \u003cp\u003e15.6 Future trends\u003c\/p\u003e \u003cp\u003eChapter 16: Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e16.1 Introduction\u003c\/p\u003e \u003cp\u003e16.2 Germanium (Ge) dots microcavity photonic devices\u003c\/p\u003e \u003cp\u003e16.3 Silicon–germanium (SiGe) quantum cascade laser (QCL) structures\u003c\/p\u003e \u003cp\u003e16.4 Conclusions\u003c\/p\u003e \u003cp\u003eChapter 17: Silicide and germanide technology for interconnections in ultra-large-scale integrated (ULSI) applications\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e17.1 Introduction\u003c\/p\u003e \u003cp\u003e17.2 Formation of silicide and germanosilicide thin films\u003c\/p\u003e \u003cp\u003e17.3 Crystalline properties of silicides\u003c\/p\u003e \u003cp\u003e17.4 Electrical properties\u003c\/p\u003e \u003cp\u003ePart IV: Devices using silicon, germanium and silicon–germanium (Si, Ge and SiGe) alloys\u003c\/p\u003e \u003cp\u003eChapter 18: Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e18.1 Introduction\u003c\/p\u003e \u003cp\u003e18.2 Epitaxial growth\u003c\/p\u003e \u003cp\u003e18.3 Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT)\u003c\/p\u003e \u003cp\u003e18.4 Silicon–germanium (SiGe) bipolar complementary metal oxide semiconductors (BiCMOS)\u003c\/p\u003e \u003cp\u003e18.5 Applications in integrated circuit (IC) and large-scale integration (LSI)\u003c\/p\u003e \u003cp\u003e18.6 Conclusion\u003c\/p\u003e \u003cp\u003eChapter 19: Silicon–germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e19.1 Introduction\u003c\/p\u003e \u003cp\u003e19.2 Silicon–germanium (SiGe) channel metal oxide semiconductor field effect transistors (MOSFETs)\u003c\/p\u003e \u003cp\u003e19.3 Conclusion\u003c\/p\u003e \u003cp\u003eChapter 20: High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e20.1 Introduction\u003c\/p\u003e \u003cp\u003e20.2 Gate stack formation\u003c\/p\u003e \u003cp\u003e20.3 Metal oxide semiconductor field effect transistor (MOSFET) fabrication and electron inversion layer mobility\u003c\/p\u003e \u003cp\u003e20.4 Germanium (Ge)\/metal Schottky interface and metal source\/drain metal oxide semiconductor field effect transistors (MOSFETs)\u003c\/p\u003e \u003cp\u003e20.5 Conclusion and future trends\u003c\/p\u003e \u003cp\u003e20.6 Acknowledgments\u003c\/p\u003e \u003cp\u003eChapter 21: Silicon (Si) and germanium (Ge) in optical devices\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e21.1 Background\u003c\/p\u003e \u003cp\u003e21.2 Optical waveguides\u003c\/p\u003e \u003cp\u003e21.3 Modulators\u003c\/p\u003e \u003cp\u003e21.4 Photodetectors and photovoltaics\u003c\/p\u003e \u003cp\u003e21.5 Light sources\u003c\/p\u003e \u003cp\u003e21.6 Future trends\u003c\/p\u003e \u003cp\u003e21.7 Sources of further information and advice\u003c\/p\u003e \u003cp\u003eChapter 22: Spintronics of nanostructured manganese germanium (MnGe) dilute magnetic semiconductor\u003c\/p\u003e \u003cp\u003eAbstract:\u003c\/p\u003e \u003cp\u003e22.1 Introduction\u003c\/p\u003e \u003cp\u003e22.2 Theories of ferromagnetism in group IV dilute magnetic semiconductor (DMS)\u003c\/p\u003e \u003cp\u003e22.3 Growth and characterizations of group IV dilute magnetic semiconductor (DMS) and nanostructures\u003c\/p\u003e \u003cp\u003e22.4 Electric field-controlled ferromagnetism\u003c\/p\u003e \u003cp\u003e22.5 Conclusion and future trends\u003c\/p\u003e \u003cp\u003eIndex\u003c\/p\u003e\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eSubject Areas: Electronic devices \u0026amp; materials [\u003ca title=\"See our other books on Electronic devices \u0026amp; materials\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Electronic%20devices%20\u0026amp;%20materials%20%5BTJFD%5D%22\"\u003eTJFD\u003c\/a\u003e], Materials science [\u003ca title=\"See our other books on Materials science\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Materials%20science%20%5BTGM%5D%22\"\u003eTGM\u003c\/a\u003e], Metals technology \/ metallurgy [\u003ca title=\"See our other books on Metals technology \/ metallurgy\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Metals%20technology%20\/%20metallurgy%20%5BTDM%5D%22\"\u003eTDM\u003c\/a\u003e], Condensed matter physics [\u003ca title=\"See our other books on Condensed matter physics\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Condensed%20matter%20physics%20%5Bliquid%20state%20\u0026amp;%20solid%20state%20physics%5D%20%5BPHFC%5D%22\"\u003eliquid state \u0026amp; solid state physics PHFC\u003c\/a\u003e]\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003c\/font\u003e","brand":"Woodhead Publishing","offers":[{"title":"Default Title","offer_id":46649158598936,"sku":"9780081017395","price":154.59,"currency_code":"GBP","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0730\/2037\/5320\/products\/9780081017395_b8b2aeaf-980c-40f4-afb3-a058599719b8.jpg?v=1695006336","url":"https:\/\/freshlyprintedbooks.co.uk\/products\/silicon-germanium-sige-nanostructures-production-properties-and-applications-in-electronics-paperback-9780081017395","provider":"Freshly Printed Books","version":"1.0","type":"link"}