{"product_id":"non-volatile-memories-hardback-9781848216235","title":"Non-volatile Memories (Hardback) 9781848216235","description":"\u003cfont face=\"Georgia\"\u003e\r\n\u003cp\u003e\u003cfont size=\"6\"\u003eNon-volatile Memories\u003c\/font\u003e\u003cbr\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003c\/p\u003e\n\u003cp\u003e\u003cfont size=\"4\"\u003ePierre-Camille Lacaze (Author), Jean-Claude Lacroix (Author)\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e9781848216235, Wiley\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eHardback, published 28 November 2014\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e304 pages\u003cbr\u003e24.1 x 16.4 x 2.3 cm, 0.603 kg\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003cp align=\"justify\"\u003e\u003cstrong\u003e\u003cfont size=\"3\"\u003eWritten for scientists, researchers, and engineers, \u003ci\u003eNon-volatile Memories\u003c\/i\u003e describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.\u003c\/font\u003e\u003c\/strong\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e\u003cp\u003eACKNOWLEDGEMENTS xi\u003c\/p\u003e \u003cp\u003ePREFACE xiii\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART 1. INFORMATION STORAGE AND THE STATE OF THE ART OF ELECTRONIC MEMORIES 1\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 1. GENERAL ISSUES RELATED TO DATA STORAGE AND ANALYSIS CLASSIFICATION OF MEMORIES AND RELATED PERSPECTIVES 3\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e1.1. Issues arising from the flow of digital information 3\u003c\/p\u003e \u003cp\u003e1.2. Current electronic memories and their classification 5\u003c\/p\u003e \u003cp\u003e1.3. Memories of the future 8\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 2. STATE OF THE ART OF DRAM, SRAM, FLASH, HDD AND MRAM ELECTRONIC MEMORIES 13\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1. DRAM volatile memories 13\u003c\/p\u003e \u003cp\u003e2.1.1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor) 14\u003c\/p\u003e \u003cp\u003e2.1.2. Operating characteristics of DRAM memories 17\u003c\/p\u003e \u003cp\u003e2.2. SRAM memories 19\u003c\/p\u003e \u003cp\u003e2.3. Non-volatile memories related to CMOS technology 22\u003c\/p\u003e \u003cp\u003e2.3.1. Operational characteristics of a floating gate MOSFET 22\u003c\/p\u003e \u003cp\u003e2.3.2. Flash memories 38\u003c\/p\u003e \u003cp\u003e2.4. Non-volatile magnetic memories (hard disk drives – HDDs and MRAMs) 45\u003c\/p\u003e \u003cp\u003e2.4.1. The discovery of giant magneto resistance at the origin of the spread of hard disk drives 46\u003c\/p\u003e \u003cp\u003e2.4.2. Spin valves 49\u003c\/p\u003e \u003cp\u003e2.4.3. Magnetic tunnel junctions 51\u003c\/p\u003e \u003cp\u003e2.4.4. Operational characteristics of a hard disk drive (HDD) 51\u003c\/p\u003e \u003cp\u003e2.4.5. Characteristics of a magnetic random access memory (MRAM) 54\u003c\/p\u003e \u003cp\u003e2.5. Conclusion 56\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 3. EVOLUTION OF SSD TOWARD FERAM, FEFET, CTM AND STT-RAM MEMORIES 59\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e3.1. Evolution of DRAMs toward ferroelectric FeRAMs 60\u003c\/p\u003e \u003cp\u003e3.1.1. Characteristics of a ferroelectric material 60\u003c\/p\u003e \u003cp\u003e3.1.2. Principle of an FeRAM memory 63\u003c\/p\u003e \u003cp\u003e3.1.3. Characteristics of an FeFET memory 67\u003c\/p\u003e \u003cp\u003e3.2. The evolution of Flash memories towards charge trap memories (CTM) 77\u003c\/p\u003e \u003cp\u003e3.3. The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM) 82\u003c\/p\u003e \u003cp\u003e3.3.1. Nanomagnetism and experimental implications 83\u003c\/p\u003e \u003cp\u003e3.3.2. Characteristics of spin torque transfer 84\u003c\/p\u003e \u003cp\u003e3.3.3. Recent evolution with use of perpendicular magnetic anisotropic materials 88\u003c\/p\u003e \u003cp\u003e3.4. Conclusions 90\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART 2. THE EMERGENCE OF NEW CONCEPTS: THE INORGANIC NEMS, PCRAM, RERAM AND ORGANIC MEMORIES 93\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 4. VOLATILE AND NON-VOLATILE MEMORIES BASED ON NEMS 95\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1. Nanoelectromechanical switches with two electrodes 96\u003c\/p\u003e \u003cp\u003e4.1.1. NEMS with cantilevers 97\u003c\/p\u003e \u003cp\u003e4.1.2. NEMS with suspended bridge 102\u003c\/p\u003e \u003cp\u003e4.1.3. Crossed carbon nanotube networks 103\u003c\/p\u003e \u003cp\u003e4.2. NEMS switches with three electrodes 106\u003c\/p\u003e \u003cp\u003e4.2.1. Cantilever switch elaborated by lithographic techniques 107\u003c\/p\u003e \u003cp\u003e4.2.2. Nanoswitches with carbon nanotubes 110\u003c\/p\u003e \u003cp\u003e4.2.3. NEMS-FET hybrid memories with a mobile floating gate or mobile cantilever 116\u003c\/p\u003e \u003cp\u003e4.4. Conclusion 121\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 5. NON-VOLATILE PHASE-CHANGE ELECTRONIC MEMORIES (PCRAM) 123\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1. Operation of an electronic phase-change memory 125\u003c\/p\u003e \u003cp\u003e5.1.1. Composition and functioning of a GST PCRAM 125\u003c\/p\u003e \u003cp\u003e5.1.2. The antinomy between the high resistance of the amorphous state and rapid heating 129\u003c\/p\u003e \u003cp\u003e5.2. Comparison of physicochemical characteristics of a few phase-change materials 134\u003c\/p\u003e \u003cp\u003e5.3. Key factors for optimized performances of PCM memories 137\u003c\/p\u003e \u003cp\u003e5.3.1. Influence of cell geometry on the current Im needed for crystal melting 138\u003c\/p\u003e \u003cp\u003e5.3.2. Optimization of phase-change alloy composition to improve performance 143\u003c\/p\u003e \u003cp\u003e5.3.3. Influence of nanostructuration of the phase-change material 148\u003c\/p\u003e \u003cp\u003e5.3.4. Recent techniques for improvement of amorphization and crystallization rates of phase-change materials 156\u003c\/p\u003e \u003cp\u003e5.3.5. Problems related to interconnection of PCRAM cells in a 3D crossbar-type architecture 160\u003c\/p\u003e \u003cp\u003e5.4. Conclusion 162\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 6. RESISTIVE MEMORY SYSTEMS (RRAM) 165\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1. Main characteristics of resistive memories 168\u003c\/p\u003e \u003cp\u003e6.1.1. Unipolar system 169\u003c\/p\u003e \u003cp\u003e6.1.2. Bipolar system 170\u003c\/p\u003e \u003cp\u003e6.2. Electrochemical metallization memories 171\u003c\/p\u003e \u003cp\u003e6.2.1. Atomic switches 174\u003c\/p\u003e \u003cp\u003e6.2.2. Metallization memories with an insulator or a semiconductor 177\u003c\/p\u003e \u003cp\u003e6.2.3. Conclusions on metallization memories 182\u003c\/p\u003e \u003cp\u003e6.3. Resistive valence change memories (VCM) 183\u003c\/p\u003e \u003cp\u003e6.3.1. The first work on resistive memories 183\u003c\/p\u003e \u003cp\u003e6.3.2. Resistive valence change memories after the 2000s 185\u003c\/p\u003e \u003cp\u003e6.3.3. A perovskite resistive memory (SrZrO3) with better performance than Flash memories 186\u003c\/p\u003e \u003cp\u003e6.3.4. Electroforming and resistive switching 189\u003c\/p\u003e \u003cp\u003e6.3.5. Hafnium oxide for universal resistive memories? 195\u003c\/p\u003e \u003cp\u003e6.4. Conclusion 198\u003c\/p\u003e \u003cp\u003e\u003cb\u003eCHAPTER 7. ORGANIC AND NON-VOLATILE ELECTRONIC MEMORIES 201\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e7.1. Flash-type organic memories 204\u003c\/p\u003e \u003cp\u003e7.1.1. Flexible FG-OFET device with metal floating gate 205\u003c\/p\u003e \u003cp\u003e7.1.2. Flexible organic FG-OFET entirely elaborated by spin coating and inkjet printing 212\u003c\/p\u003e \u003cp\u003e7.1.3. Flexible OFETs with charge-trap gate dielectrics 216\u003c\/p\u003e \u003cp\u003e7.1.4. OFETs with conductive nanoparticles encapsulated in the gate dielectric 221\u003c\/p\u003e \u003cp\u003e7.1.5. Redox dielectric OFETs 226\u003c\/p\u003e \u003cp\u003e7.2. Resistive organic memories with two contacts 230\u003c\/p\u003e \u003cp\u003e7.2.1. Organic memories based on electrochemical metallization 232\u003c\/p\u003e \u003cp\u003e7.2.2. Resistive charge-trap organic memories 238\u003c\/p\u003e \u003cp\u003e7.3. Molecular memories 244\u003c\/p\u003e \u003cp\u003e7.4. Conclusion 248\u003c\/p\u003e \u003cp\u003eCONCLUSION 251\u003c\/p\u003e \u003cp\u003eBIBLIOGRAPHY 255\u003c\/p\u003e \u003cp\u003eINDEX 285\u003c\/p\u003e\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eSubject Areas: Mechanical engineering \u0026amp; materials [\u003ca title=\"See our other books on Mechanical engineering \u0026amp; materials\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Mechanical%20engineering%20\u0026amp;%20materials%20%5BTG%5D%22\"\u003eTG\u003c\/a\u003e]\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003c\/font\u003e","brand":"Wiley-ISTE","offers":[{"title":"Brand New","offer_id":52449386430744,"sku":"9781848216235","price":106.49,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0730\/2037\/5320\/files\/9781848216235.jpg?v=1785197640","url":"https:\/\/freshlyprintedbooks.co.uk\/products\/non-volatile-memories-hardback-9781848216235","provider":"Freshly Printed Books","version":"1.0","type":"link"}