{"product_id":"microelectronic-applications-of-chemical-mechanical-planarization-hardback-9780471719199","title":"Microelectronic Applications of Chemical Mechanical Planarization (Hardback) 9780471719199","description":"\u003cfont face=\"Georgia\"\u003e\r\n\u003cp\u003e\u003cfont size=\"6\"\u003eMicroelectronic Applications of Chemical Mechanical Planarization\u003c\/font\u003e\u003cbr\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003c\/p\u003e\n\u003cp\u003e\u003cfont size=\"4\"\u003eYuzhuo Li (Edited by), Y Li (Author)\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e9780471719199, Wiley\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eHardback, published 13 November 2007\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e760 pages\u003cbr\u003e23.6 x 15.5 x 4.3 cm, 1.202 kg\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\r\n\r\n\r\n\u003cp align=\"justify\"\u003e\u003cstrong\u003e\u003cfont size=\"3\"\u003eAn authoritative, systematic, and comprehensive description of current CMP technology\u003cbr\u003e \u003cbr\u003e Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization:\u003cbr\u003e *\u003cbr\u003e \u003cbr\u003e Provides in-depth coverage of a wide range of state-of-the-art technologies and applications\u003cbr\u003e *\u003cbr\u003e \u003cbr\u003e Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips\u003cbr\u003e *\u003cbr\u003e \u003cbr\u003e Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP\u003cbr\u003e *\u003cbr\u003e \u003cbr\u003e Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP\u003cbr\u003e *\u003cbr\u003e \u003cbr\u003e Provides a perspective on the opportunities and challenges of the next fifteen years\u003cbr\u003e \u003cbr\u003e Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.\u003c\/font\u003e\u003c\/strong\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003e\u003cp\u003eForeword xix\u003c\/p\u003e \u003cp\u003eContributing Authors xxiii\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1 Why CMP? 1\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYuzhuo Li\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e1.1 Introduction 1\u003c\/p\u003e \u003cp\u003e1.2 Preparation of Planar Surface 2\u003c\/p\u003e \u003cp\u003e1.2.1 Multilevel Metallization and the Need for Planarization 2\u003c\/p\u003e \u003cp\u003e1.2.2 Degrees of Planarization 4\u003c\/p\u003e \u003cp\u003e1.2.3 Methods of Planarization 5\u003c\/p\u003e \u003cp\u003e1.2.4 Chemical and Mechanical Planarization of Dielectric Films 7\u003c\/p\u003e \u003cp\u003e1.2.5 Preparation of Planar Thin Films for Non-IC Applications Using CMP 8\u003c\/p\u003e \u003cp\u003e1.3 Formation of Functional Microstructures 9\u003c\/p\u003e \u003cp\u003e1.3.1 \u003ci\u003eRC\u003c\/i\u003e Delay and New Interconnect Materials 9\u003c\/p\u003e \u003cp\u003e1.3.2 Damascene and Dual Damascene 12\u003c\/p\u003e \u003cp\u003e1.3.3 Tungsten CMP 15\u003c\/p\u003e \u003cp\u003e1.3.4 STI 16\u003c\/p\u003e \u003cp\u003e1.4 CMP to Correct Defects 19\u003c\/p\u003e \u003cp\u003e1.5 Advantages and Disadvantages of CMP 20\u003c\/p\u003e \u003cp\u003e1.6 Conclusion 21\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 Current and Future Challenges in CMP Materials 25\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eMansour Moinpour\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e2.1 Introduction 25\u003c\/p\u003e \u003cp\u003e2.2 Historic Prospective and Future Trends 27\u003c\/p\u003e \u003cp\u003e2.3 CMP Material Characterization 32\u003c\/p\u003e \u003cp\u003e2.3.1 Thermal Effects 33\u003c\/p\u003e \u003cp\u003e2.3.2 Slurry Rheology Studies 35\u003c\/p\u003e \u003cp\u003e2.3.3 Slurry–Pad Interactions 38\u003c\/p\u003e \u003cp\u003e2.3.4 Pad Groove Effects 42\u003c\/p\u003e \u003cp\u003e2.3.5 Pad–Wafer Contact and Slarry Transport: Dual Emission Laser Induced Fluorescence 43\u003c\/p\u003e \u003cp\u003e2.3.6 Dynamic Nuclear Magnetic Resonance 45\u003c\/p\u003e \u003cp\u003e2.3.7 CMP Slurry Stability and Correlation with Defectivity 49\u003c\/p\u003e \u003cp\u003e2.4 Conclusions 51\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 Processing Tools for Manufacturing 57\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eManabu Tsujimura\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e3.1 CMP Operation and Characteristics 57\u003c\/p\u003e \u003cp\u003e3.2 Description of the CMP Process 59\u003c\/p\u003e \u003cp\u003e3.3 Overview of Polishers 60\u003c\/p\u003e \u003cp\u003e3.3.1 CMP System 60\u003c\/p\u003e \u003cp\u003e3.3.2 Brief History of CMP Systems 61\u003c\/p\u003e \u003cp\u003e3.3.3 Diversity in CMP Tools 62\u003c\/p\u003e \u003cp\u003e3.3.4 Polisher 62\u003c\/p\u003e \u003cp\u003e3.3.5 Cleaning Module in a Dry-in\/Dry-out System 64\u003c\/p\u003e \u003cp\u003e3.4 Carriers and Dressers 65\u003c\/p\u003e \u003cp\u003e3.4.1 Functions of Carriers and Dressers 65\u003c\/p\u003e \u003cp\u003e3.4.2 Carrier 65\u003c\/p\u003e \u003cp\u003e3.4.3 Profile Control by Carriers 68\u003c\/p\u003e \u003cp\u003e3.4.4 Dressers 69\u003c\/p\u003e \u003cp\u003e3.5 \u003ci\u003eIn Situ\u003c\/i\u003e and \u003ci\u003eEx Situ\u003c\/i\u003e Metrologies 72\u003c\/p\u003e \u003cp\u003e3.5.1 Application 72\u003c\/p\u003e \u003cp\u003e3.5.2 Representative Monitors 72\u003c\/p\u003e \u003cp\u003e3.5.3 Other Applications for the Monitors 75\u003c\/p\u003e \u003cp\u003e3.5.4 Communication 75\u003c\/p\u003e \u003cp\u003e3.6 Conclusions 78\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 Tribometrology of CMP Process 81\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eNorm Gitis and Raghu Mudhivarthi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e4.1 Introduction 81\u003c\/p\u003e \u003cp\u003e4.2 Tribometrology of CMP 82\u003c\/p\u003e \u003cp\u003e4.3 Factors Influencing the Tribology During CMP 85\u003c\/p\u003e \u003cp\u003e4.3.1 Process Parameters During CMP 85\u003c\/p\u003e \u003cp\u003e4.3.2 Polishing Pad Characteristics 88\u003c\/p\u003e \u003cp\u003e4.3.3 Slurry Characteristics 90\u003c\/p\u003e \u003cp\u003e4.3.4 Water Contour Characterists 92\u003c\/p\u003e \u003cp\u003e4.4 Optimizing Pad Conditioning Process 92\u003c\/p\u003e \u003cp\u003e4.4.1 PadProbe\u003csup\u003eTM\u003c\/sup\u003e 92\u003c\/p\u003e \u003cp\u003e4.4.2 Effect of Temperature 100\u003c\/p\u003e \u003cp\u003e4.5 Conditioner Design 102\u003c\/p\u003e \u003cp\u003e4.6 CMP Consumable Testing 105\u003c\/p\u003e \u003cp\u003e4.6.1 Slurry Testing 105\u003c\/p\u003e \u003cp\u003e4.6.2 Pad Testing 108\u003c\/p\u003e \u003cp\u003e4.6.3 Retaining Rings 110\u003c\/p\u003e \u003cp\u003e4.7 Defect Analysis 113\u003c\/p\u003e \u003cp\u003e4.7.1 Coefficient of Friction and Acoustic Emission Signal 113\u003c\/p\u003e \u003cp\u003e4.7.2 Advanced Signal Processing 114\u003c\/p\u003e \u003cp\u003e4.8 Summary 117\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Pads for IC CMP 123\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eChangxue Wang, Ed Paul, Toshihiro Kobayashi and Yuzhuo Li\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e5.1 Introduction 123\u003c\/p\u003e \u003cp\u003e5.2 Physical Properties of CMP Pads and Their Effects on Polishing Performance 124\u003c\/p\u003e \u003cp\u003e5.2.1 Pad Types 124\u003c\/p\u003e \u003cp\u003e5.2.2 Pad Microstructures and Macrostructures 125\u003c\/p\u003e \u003cp\u003e5.2.3 Polyurethane Pad Properties and Control 127\u003c\/p\u003e \u003cp\u003e5.2.3.1 Hardness Young’s Modulus, and Strength 127\u003c\/p\u003e \u003cp\u003e5.2.3.2 Pad Porosity\/Density 128\u003c\/p\u003e \u003cp\u003e5.2.3.3 Pad Thickness 128\u003c\/p\u003e \u003cp\u003e5.2.3.4 Pad Stiffness\/Stacked Pads 129\u003c\/p\u003e \u003cp\u003e5.2.3.5 Pad Grooves 129\u003c\/p\u003e \u003cp\u003e5.2.4 Effects of Pad Property on Polishing Performance 129\u003c\/p\u003e \u003cp\u003e5.2.4.1 Pad Roughness Effects 130\u003c\/p\u003e \u003cp\u003e5.2.4.2 Pad Porosity\/Density Effects 131\u003c\/p\u003e \u003cp\u003e5.2.4.3 Pad Hardness, Young’s Modulus, Stiffness, and Thickness Effects 136\u003c\/p\u003e \u003cp\u003e5.2.4.4 Pad Groove Effects 138\u003c\/p\u003e \u003cp\u003e5.3 Chemical Properties of CMP Pads and Their Effects on Polishing Performances 140\u003c\/p\u003e \u003cp\u003e5.3.1 Polyurethane Pad Components 140\u003c\/p\u003e \u003cp\u003e5.3.2 Polyurethane Property Control by Chemical Components 140\u003c\/p\u003e \u003cp\u003e5.3.3 Chemical Effects on Polishing Performance 141\u003c\/p\u003e \u003cp\u003e5.4 Pad Conditioning and Its Effect on CMP Performance 142\u003c\/p\u003e \u003cp\u003e5.5 Modeling of Pad Effects on Polishing Performance 145\u003c\/p\u003e \u003cp\u003e5.5.1 Review of Modeling of Pad Effects on Polishing Performance 145\u003c\/p\u003e \u003cp\u003e5.5.2 Modeling of Pad Effects on Polishing Performance 148\u003c\/p\u003e \u003cp\u003e5.5.2.1 Pads and Pressure 148\u003c\/p\u003e \u003cp\u003e5.5.2.2 Pads and Abrasives 150\u003c\/p\u003e \u003cp\u003e5.5.2.3 Pads, Dishing, and Erosion 154\u003c\/p\u003e \u003cp\u003e5.6 Novel Designs of CMP Pads 159\u003c\/p\u003e \u003cp\u003e5.6.1 Particle-Containing Pads 159\u003c\/p\u003e \u003cp\u003e5.6.2 Surface-Treated Pads 162\u003c\/p\u003e \u003cp\u003e5.6.3 Reactive Pad 164\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 Modeling 171\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eLeonard Borucki and Ara Philipossian\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e6.1 Introduction 171\u003c\/p\u003e \u003cp\u003e6.2 A Two-Step Chemical Mechanical Material Removal Model 172\u003c\/p\u003e \u003cp\u003e6.3 Pad Surfaces and Pad Surface Contact Modeling 175\u003c\/p\u003e \u003cp\u003e6.4 Reaction Temperature 178\u003c\/p\u003e \u003cp\u003e6.5 A Polishing Example 185\u003c\/p\u003e \u003cp\u003e6.6 Topography Planarization 189\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7 Key Chemical Components in Metal CMP Slurries 201\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eKrishnayya Cheemalapati, Jason Keleher and Yuzhuo Li\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e7.1 Introduction 201\u003c\/p\u003e \u003cp\u003e7.2 Oxidizers 202\u003c\/p\u003e \u003cp\u003e7.2.1 Nitric Acid 202\u003c\/p\u003e \u003cp\u003e7.2.2 Hydrogen Peroxide 203\u003c\/p\u003e \u003cp\u003e7.2.3 Ferric Nitrate 210\u003c\/p\u003e \u003cp\u003e7.2.4 Potassium Permanganate, Dichromates, and Iodate 212\u003c\/p\u003e \u003cp\u003e7.3 Chelating Agents 214\u003c\/p\u003e \u003cp\u003e7.3.1 Ammonia 215\u003c\/p\u003e \u003cp\u003e7.3.2 Amino Acids 216\u003c\/p\u003e \u003cp\u003e7.3.3 Organic Acids 217\u003c\/p\u003e \u003cp\u003e7.3.4 Thermodynamic Consideration and Quantitative Description 218\u003c\/p\u003e \u003cp\u003e7.4 Surfactants 219\u003c\/p\u003e \u003cp\u003e7.4.1 Structures and Physical Properties of Surfactants 219\u003c\/p\u003e \u003cp\u003e7.4.2 Dispersion of Particles 221\u003c\/p\u003e \u003cp\u003e7.4.3 Surface Modification of Wafer Surface 222\u003c\/p\u003e \u003cp\u003e7.5 Abrasive Particles 225\u003c\/p\u003e \u003cp\u003e7.5.1 Hardness 225\u003c\/p\u003e \u003cp\u003e7.5.2 Bulk Particle Density 227\u003c\/p\u003e \u003cp\u003e7.5.3 Particle Crystallinity and Shapes 227\u003c\/p\u003e \u003cp\u003e7.5.4 Particle Size and Oversized Particle Count 228\u003c\/p\u003e \u003cp\u003e7.5.5 Particle Preparation 230\u003c\/p\u003e \u003cp\u003e7.5.6 Surface Properties 231\u003c\/p\u003e \u003cp\u003e7.6 Particle Surface Modification 233\u003c\/p\u003e \u003cp\u003e7.7 Soft Particles 234\u003c\/p\u003e \u003cp\u003e7.8 Case Study: Organic Particles as Abrasives in Cu CMP 235\u003c\/p\u003e \u003cp\u003e7.8.1 Particle Characterization 235\u003c\/p\u003e \u003cp\u003e7.8.2 Material Removal Rate and Selectivity 235\u003c\/p\u003e \u003cp\u003e7.8.3 Step Height Reduction Efficiency and Overpolishing Window 239\u003c\/p\u003e \u003cp\u003e7.8.4 Summary on the Organic Particles 239\u003c\/p\u003e \u003cp\u003e7.9 Conclusions 239\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8 Corrosion Inhibitor for Cu CMP Slurry 249\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eSuresh Kumar Govindaswamy and Yuzhuo Li\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e8.1 Thermodynamic Considerations of Copper Surface 250\u003c\/p\u003e \u003cp\u003e8.2 Types of Passivating Films on Copper Surface Under Oxdizing Conditions 252\u003c\/p\u003e \u003cp\u003e8.3 Effect of pH on BTA in Glycine-Hydrogen Peroxide Based Cu CMP Slurry 257\u003c\/p\u003e \u003cp\u003e8.4 Evaluation of Potential BTA Alternatives for Acidic Cu CMP Slurry 259\u003c\/p\u003e \u003cp\u003e8.5 Electrochemical Polarization Study of Corrosion Inhibitors in Cu CMP Slurry 263\u003c\/p\u003e \u003cp\u003e8.6 Hydrophobicity of the Surface Passivation Film 265\u003c\/p\u003e \u003cp\u003e8.7 Competitive Surface Adsorption Behavior of Corrosion Inhibitors 266\u003c\/p\u003e \u003cp\u003e8.8 Summary 270\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9 Tungsten CMP Applications 277\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJeff Visser\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e9.1 Introduction 277\u003c\/p\u003e \u003cp\u003e9.2 Basic Tungsten Application, Requirements, and Process 278\u003c\/p\u003e \u003cp\u003e9.2.1 Basic Applications of Tungsten CMP 278\u003c\/p\u003e \u003cp\u003e9.2.2 Basic W CMP Requirements and Procedures 281\u003c\/p\u003e \u003cp\u003e9.3 W CMP Defects 282\u003c\/p\u003e \u003cp\u003e9.4 Various W CMP Processing Options 285\u003c\/p\u003e \u003cp\u003e9.4.1 Basic Considerations 285\u003c\/p\u003e \u003cp\u003e9.4.2 Barrier Polishing 289\u003c\/p\u003e \u003cp\u003e9.4.3 Oxide Buffing 289\u003c\/p\u003e \u003cp\u003e9.4.4 Post-W CMP Cleaning 290\u003c\/p\u003e \u003cp\u003e9.5 Overall Tungsten Process (Various Processing Design Options and Suggestions) 290\u003c\/p\u003e \u003cp\u003e9.5.1 W CMP Process Controls 290\u003c\/p\u003e \u003cp\u003e9.5.2 Platen Temperature Control 291\u003c\/p\u003e \u003cp\u003e9.5.3 Slurry Selectivity 292\u003c\/p\u003e \u003cp\u003e9.6 Conclusions 292\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10 Electrochemistry in ECMP 295\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJinshan (Jason) Huo\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e10.1 Introduction 295\u003c\/p\u003e \u003cp\u003e10.2 Physical and Chemical Processes in Electrochemical Planarization 297\u003c\/p\u003e \u003cp\u003e10.2.1 Electrode\/Electrolyte Interface 297\u003c\/p\u003e \u003cp\u003e10.2.2 Electrochemical Reaction 298\u003c\/p\u003e \u003cp\u003e10.2.3 Mass Transport 299\u003c\/p\u003e \u003cp\u003e10.2.4 Anodic Polarization Curve and Conditions for Electrochemical Planarization 300\u003c\/p\u003e \u003cp\u003e10.3 Mechanisms and Limitation of Electrochemical Planarization 304\u003c\/p\u003e \u003cp\u003e10.3.1 Ohmic Leveling 304\u003c\/p\u003e \u003cp\u003e10.3.2 Diffusion Leveling 305\u003c\/p\u003e \u003cp\u003e10.3.3 Migration Leveling 307\u003c\/p\u003e \u003cp\u003e10.4 \u003ci\u003eIn Situ\u003c\/i\u003e Analysis of Anodic\/Passivation Films 309\u003c\/p\u003e \u003cp\u003e10.4.1 Impedance Measurement 309\u003c\/p\u003e \u003cp\u003e10.4.2 Electrochemical Impedance Spectroscopy 310\u003c\/p\u003e \u003cp\u003e10.4.3 Ellipsometry 311\u003c\/p\u003e \u003cp\u003e10.5 Modified Electrochemical Polishing Approaches 312\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11 Planarization Technologies Involving Electrochemical Reactions 319\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eLaertis Economikos\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e11.1 Introduction 319\u003c\/p\u003e \u003cp\u003e11.2 CMP 321\u003c\/p\u003e \u003cp\u003e11.3 ECP 322\u003c\/p\u003e \u003cp\u003e11.4 ECMP 326\u003c\/p\u003e \u003cp\u003e11.5 Full Sequence Electrochemical–Mechanical Planarization 334\u003c\/p\u003e \u003cp\u003e11.6 Conclusions 340\u003c\/p\u003e \u003cp\u003e\u003cb\u003e12 Shallow Trench Isolation Chemical Mechanical Planarization 345\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYordan Stefanov and Udo Schwalke\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e12.1 Introduction 345\u003c\/p\u003e \u003cp\u003e12.2 LOCOS to STI 346\u003c\/p\u003e \u003cp\u003e12.3 Shallow Trench Isolation 349\u003c\/p\u003e \u003cp\u003e12.4 The Planarization Step in Detail 351\u003c\/p\u003e \u003cp\u003e12.5 Optimization Techniques 358\u003c\/p\u003e \u003cp\u003e12.5.1 Dummy Active Area Insertion 359\u003c\/p\u003e \u003cp\u003e12.5.2 Patterned Oxide Etch Back 359\u003c\/p\u003e \u003cp\u003e12.5.3 Nitride Overcoat 360\u003c\/p\u003e \u003cp\u003e12.5.4 EXTIGATE 361\u003c\/p\u003e \u003cp\u003e12.5.5 Selective Oxide Deposition 363\u003c\/p\u003e \u003cp\u003e12.5.6 Polysilicon-Filled Trenches 363\u003c\/p\u003e \u003cp\u003e12.6 Outlook 364\u003c\/p\u003e \u003cp\u003e\u003cb\u003e13 Consumables for Advanced Shallow Trench Isolation (STI) 369\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eCraig D. Burkhard\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e13.1 Introduction 369\u003c\/p\u003e \u003cp\u003e13.2 Representative Testing Wafers for STI Process and Consumable Evaluations 371\u003c\/p\u003e \u003cp\u003e13.3 Effects of Abrasive Types on STI Slurry Performance 373\u003c\/p\u003e \u003cp\u003e13.4 Effects of Chemical Additives to Oxide: Nitride Selectivity 379\u003c\/p\u003e \u003cp\u003e13.5 Effect of Slurry pH 385\u003c\/p\u003e \u003cp\u003e13.6 Effect of Abrasive Particle Size on Removal Rate and Defectivity 388\u003c\/p\u003e \u003cp\u003e13.7 Conclusion 395\u003c\/p\u003e \u003cp\u003e\u003cb\u003e14 Fabrication of Microdevices Using CMP 401\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eGerfried Zwicker\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e14.1 Introduction 401\u003c\/p\u003e \u003cp\u003e14.2 Microfabrication Processes 402\u003c\/p\u003e \u003cp\u003e14.3 Microfabrication Products 403\u003c\/p\u003e \u003cp\u003e14.4 CMP Requirements in Comparison with IC Fabrication 404\u003c\/p\u003e \u003cp\u003e14.5 Examples of CMP Applications for Microfabrication 412\u003c\/p\u003e \u003cp\u003e14.5.1 Case Study I: Integrated Pressure Sensor 416\u003c\/p\u003e \u003cp\u003e14.5.2 Case Study II: Poly-Si Surface Micromachining and Angular Rate Sensor 417\u003c\/p\u003e \u003cp\u003e14.5.3 Case Study III: Infrared Digital Micromirror Array 422\u003c\/p\u003e \u003cp\u003e14.5.4 More Representative Applications 425\u003c\/p\u003e \u003cp\u003e14.6 Outlook 426\u003c\/p\u003e \u003cp\u003e\u003cb\u003e15 Three-Dimensional (3D) Integration 431\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJ. Jay McMahon, Jian-Qiang Lu and Ronald J. Gutmann\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e15.1 Overview of 3D Technology 431\u003c\/p\u003e \u003cp\u003e15.2 Factors Motivating Research in 3D 432\u003c\/p\u003e \u003cp\u003e15.2.1 Small Form Factor 432\u003c\/p\u003e \u003cp\u003e15.2.2 Heterogeneous Integration 433\u003c\/p\u003e \u003cp\u003e15.2.3 Performance Enhancement 434\u003c\/p\u003e \u003cp\u003e15.3 Approaches to 3D 435\u003c\/p\u003e \u003cp\u003e15.3.1 Singulated Die 3D 435\u003c\/p\u003e \u003cp\u003e15.3.2 Wafer-Level 3D 436\u003c\/p\u003e \u003cp\u003e15.3.2.1 Wafer-Level 3D Using Oxide–Oxide Bonding 436\u003c\/p\u003e \u003cp\u003e15.3.2.2 Wafer-Level 3D Using Copper–Copper Bonding 438\u003c\/p\u003e \u003cp\u003e15.3.2.3 Wafer-Level 3D Using Adhesive Bonding 439\u003c\/p\u003e \u003cp\u003e15.3.2.4 3D Integration Using Redistribution Layer Bonding 440\u003c\/p\u003e \u003cp\u003e15.3.2.5 Summary of Wafer Level 3D Approaches 440\u003c\/p\u003e \u003cp\u003e15.4 Wafer-Level 3D Unit Processes 442\u003c\/p\u003e \u003cp\u003e15.4.1 Wafer-to-Wafer Alignment 442\u003c\/p\u003e \u003cp\u003e15.4.2 Wafer-to-Wafer Bonding 444\u003c\/p\u003e \u003cp\u003e15.4.2.1 Oxide–Oxide and Silicon–Oxide Wafer Bondings 444\u003c\/p\u003e \u003cp\u003e15.4.2.2 Copper–Copper Wafer Bonding 444\u003c\/p\u003e \u003cp\u003e15.4.2.3 Polymer Adhesive Wafer Bonding 446\u003c\/p\u003e \u003cp\u003e15.4.3 Wafer Thinning for 3D 447\u003c\/p\u003e \u003cp\u003e15.4.3.1 Timed Removal Thinning Approaches 448\u003c\/p\u003e \u003cp\u003e15.4.3.2 Thinning to Either an Etch or Polish Stop 448\u003c\/p\u003e \u003cp\u003e15.4.4 Through-Silicon Vias 449\u003c\/p\u003e \u003cp\u003e15.5 Planarity Issues in 3D Integration 450\u003c\/p\u003e \u003cp\u003e15.5.1 CMP Planarity Capabilities 451\u003c\/p\u003e \u003cp\u003e15.5.1.1 Nano- and Microscale Planarization 451\u003c\/p\u003e \u003cp\u003e15.5.1.2 Wafer-Scale Planarity 451\u003c\/p\u003e \u003cp\u003e15.5.2 Planarity Issues for Various 3D Approaches 452\u003c\/p\u003e \u003cp\u003e15.5.2.1 CMP for Via-Last Approach to 3D Using Oxide-to-Oxide Bonding 452\u003c\/p\u003e \u003cp\u003e15.5.2.2 CMP for Via-Last Approach to 3D Using Polymer Adhesive Bonding 454\u003c\/p\u003e \u003cp\u003e15.5.2.3 CMP for Via-First Approach to 3D Using Copper-to-Copper Bonding 455\u003c\/p\u003e \u003cp\u003e15.5.2.4 CMP for Via-First 3D Using Redistribution Layer Bonding 455\u003c\/p\u003e \u003cp\u003e15.6 Conclusions 456\u003c\/p\u003e \u003cp\u003e\u003cb\u003e16 Post-CMP Cleaning 467\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJin-Goo Park, Ahmed A. Busnaina and Yi-Koan Hong\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e16.1 Introduction 467\u003c\/p\u003e \u003cp\u003e16.2 Types of Post-CMP Cleaning Processes 468\u003c\/p\u003e \u003cp\u003e16.2.1 Wet Bath Type Cleaning 468\u003c\/p\u003e \u003cp\u003e16.2.2 Single Wafer Cleanings 469\u003c\/p\u003e \u003cp\u003e16.2.2.1 Immersion-Type Single-Wafer Post-CMP Cleaning System 469\u003c\/p\u003e \u003cp\u003e16.2.2.2 Single-Wafer Spin Cleaner 469\u003c\/p\u003e \u003cp\u003e16.2.2.3 Brush Cleaning 473\u003c\/p\u003e \u003cp\u003e16.2.2.4 Drying 475\u003c\/p\u003e \u003cp\u003e16.3 Post-CMP Cleaning Chemistry 477\u003c\/p\u003e \u003cp\u003e16.3.1 Conventional Wet Cleanings 477\u003c\/p\u003e \u003cp\u003e16.3.2 Chemicals Used in Post-CMP Cleaning and their Roles 478\u003c\/p\u003e \u003cp\u003e16.3.2.1 NH\u003csub\u003e4\u003c\/sub\u003eOH 478\u003c\/p\u003e \u003cp\u003e16.3.2.2 HF 478\u003c\/p\u003e \u003cp\u003e16.3.2.3 Organic Acids 479\u003c\/p\u003e \u003cp\u003e16.3.2.4 Surfactants 479\u003c\/p\u003e \u003cp\u003e16.4 Post-CMP Cleaning According to Applications 480\u003c\/p\u003e \u003cp\u003e16.4.1 Post-Oxide CMP Cleaning 480\u003c\/p\u003e \u003cp\u003e16.4.2 Post-W CMP Cleaning 481\u003c\/p\u003e \u003cp\u003e16.4.3 Post-STI CMP Cleaning 481\u003c\/p\u003e \u003cp\u003e16.4.4 Post-Poly-Si CMP Cleaning 482\u003c\/p\u003e \u003cp\u003e16.4.5 Post-Cu\/Low-k CMP Surface Cleaning 484\u003c\/p\u003e \u003cp\u003e16.4.5.1 Corrosion 486\u003c\/p\u003e \u003cp\u003e16.4.5.2 Organic Residue 487\u003c\/p\u003e \u003cp\u003e16.4.5.3 Low-k Materials 489\u003c\/p\u003e \u003cp\u003e16.4.5.4 Effect of Other Additives on Cleaning 491\u003c\/p\u003e \u003cp\u003e16.5 Adhesion Force, Friction Force, and Defects During Cu CMP 492\u003c\/p\u003e \u003cp\u003e16.5.1 Adhesion Force of Silica and Alumina on Cu 493\u003c\/p\u003e \u003cp\u003e16.5.2 Friction Force in Cu CMP Process 494\u003c\/p\u003e \u003cp\u003e16.5.3 Removal Rates of Cu Surface in Cu CMP 494\u003c\/p\u003e \u003cp\u003e16.5.4 Surface Quality of Cu After Cu CMP Process 496\u003c\/p\u003e \u003cp\u003e16.5.5 Correlation Among Friction, Adhesion Force, Removal Rate, and Surface Quality in Cu CMP 498\u003c\/p\u003e \u003cp\u003e16.6 Case Study: Megasonic Post-CMP Cleaning of Thermal Oxide Wafers 499\u003c\/p\u003e \u003cp\u003e16.6.1 Experimental Procedure 499\u003c\/p\u003e \u003cp\u003e16.6.2 The Effect of Megasonic Input Power 500\u003c\/p\u003e \u003cp\u003e16.6.3 The Effect of Temperature 503\u003c\/p\u003e \u003cp\u003e16.6.4 The Effect of Etching on Cleaning 503\u003c\/p\u003e \u003cp\u003e16.7 Summary 505\u003c\/p\u003e \u003cp\u003e\u003cb\u003e17 Defects Observed on the Wafer After the CMP Process 511\u003cbr\u003e\u003c\/b\u003e\u003ci\u003ePaul Lefevre\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e17.1 Introduction 511\u003c\/p\u003e \u003cp\u003e17.2 Defects After Oxide CMP 512\u003c\/p\u003e \u003cp\u003e17.2.1 Introduction 512\u003c\/p\u003e \u003cp\u003e17.2.2 Scratches 513\u003c\/p\u003e \u003cp\u003e17.2.3 Color Variation—Oxide Thickness Variation 516\u003c\/p\u003e \u003cp\u003e17.2.4 Slurry Residues and Organic Residues 518\u003c\/p\u003e \u003cp\u003e17.2.5 Other Particles 519\u003c\/p\u003e \u003cp\u003e17.2.6 Crystal Formation 519\u003c\/p\u003e \u003cp\u003e17.2.7 Traces Elements 519\u003c\/p\u003e \u003cp\u003e17.2.8 Radioactive Contamination 519\u003c\/p\u003e \u003cp\u003e17.2.9 Defects Existing Before Oxide CMP 520\u003c\/p\u003e \u003cp\u003e17.2.10 Source of Defect-Causing Large Particles 520\u003c\/p\u003e \u003cp\u003e17.3 Defects After Polysilicon CMP 520\u003c\/p\u003e \u003cp\u003e17.3.1 Introduction 520\u003c\/p\u003e \u003cp\u003e17.3.2 Scratches 521\u003c\/p\u003e \u003cp\u003e17.3.3 Polysilicon Residues 521\u003c\/p\u003e \u003cp\u003e17.3.4 Particles 522\u003c\/p\u003e \u003cp\u003e17.3.5 Residues 522\u003c\/p\u003e \u003cp\u003e17.3.6 Trace Elements 522\u003c\/p\u003e \u003cp\u003e17.3.7 Polysilicon Pitting and Voids 523\u003c\/p\u003e \u003cp\u003e17.3.8 Discoloration at the Edge of the Structure or Edge of the Arrays 523\u003c\/p\u003e \u003cp\u003e17.3.9 Defects Existing Before and Revealed After Polysilicon CMP 523\u003c\/p\u003e \u003cp\u003e17.3.10 Influence of Processing Temperature 524\u003c\/p\u003e \u003cp\u003e17.4 Defects After Tungsten CMP 524\u003c\/p\u003e \u003cp\u003e17.4.1 Introduction 524\u003c\/p\u003e \u003cp\u003e17.4.2 Corrosion, Pitting, and Void 524\u003c\/p\u003e \u003cp\u003e17.4.3 Tungsten Recess and Rough Tungsten Surface 525\u003c\/p\u003e \u003cp\u003e17.4.4 Scratches 528\u003c\/p\u003e \u003cp\u003e17.4.5 Discoloration—Edge Overerosion (EOE) 529\u003c\/p\u003e \u003cp\u003e17.4.6 Tungsten and Metal Liner Residues 530\u003c\/p\u003e \u003cp\u003e17.4.7 Particles, Slurry Residues, and Trace Metal 531\u003c\/p\u003e \u003cp\u003e17.4.8 Delamination 531\u003c\/p\u003e \u003cp\u003e17.4.9 Preexisting Defects Revealed After Tungsten CMP 531\u003c\/p\u003e \u003cp\u003e17.5 Defects After Copper CMP 532\u003c\/p\u003e \u003cp\u003e17.5.1 Introduction and Summary on Copper CMP Defects 532\u003c\/p\u003e \u003cp\u003e17.5.2 Copper Corrosion 533\u003c\/p\u003e \u003cp\u003e17.5.3 Copper Pitting 535\u003c\/p\u003e \u003cp\u003e17.5.4 Trenching at the Copper Line Edge 537\u003c\/p\u003e \u003cp\u003e17.5.5 Rough Copper and Copper Recess 539\u003c\/p\u003e \u003cp\u003e17.5.6 Discoloration—Metals Thickness Variations and\/or Dielectric Thickness Variation 540\u003c\/p\u003e \u003cp\u003e17.5.7 Copper Electromigration 542\u003c\/p\u003e \u003cp\u003e17.5.8 Scratches 544\u003c\/p\u003e \u003cp\u003e17.5.9 Metal Residues 544\u003c\/p\u003e \u003cp\u003e17.5.10 Particles, Residues, and Trace Metals 547\u003c\/p\u003e \u003cp\u003e17.5.11 Delamination 548\u003c\/p\u003e \u003cp\u003e17.6 Defect Observation and Characterization Techniques 551\u003c\/p\u003e \u003cp\u003e17.6.1 Optical Microscope 551\u003c\/p\u003e \u003cp\u003e17.6.2 Scanning Electron Microscope 552\u003c\/p\u003e \u003cp\u003e17.6.3 Energy Dispersive X-Ray Spectroscopy (EDX) 552\u003c\/p\u003e \u003cp\u003e17.6.4 Scanning Auger Microscope (SAM) 553\u003c\/p\u003e \u003cp\u003e17.6.5 Atomic Force Microscopy 553\u003c\/p\u003e \u003cp\u003e17.7 Ensemble Defect Detection and Inspection Techniques 554\u003c\/p\u003e \u003cp\u003e17.7.1 Optical Scan of Flat Film Blanket Wafers 554\u003c\/p\u003e \u003cp\u003e17.7.2 Optical Scan of Patterned Wafers 554\u003c\/p\u003e \u003cp\u003e17.7.3 Defect Classification 555\u003c\/p\u003e \u003cp\u003e17.8 Consideration for the Future 555\u003c\/p\u003e \u003cp\u003e\u003cb\u003e18 CMP Slurry Metrology, Distribution, and Filtration 563\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eRakesh K. Singh\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e18.1 Introduction 564\u003c\/p\u003e \u003cp\u003e18.2 CMP Slurry Metrology and Characterization 567\u003c\/p\u003e \u003cp\u003e18.2.1 Slurry Health Monitoring and Control 568\u003c\/p\u003e \u003cp\u003e18.2.2 CMP Slurry Blend Control 569\u003c\/p\u003e \u003cp\u003e18.2.2.1 Two-Component Blend Control 570\u003c\/p\u003e \u003cp\u003e18.2.2.2 Three-Component Blend Control 572\u003c\/p\u003e \u003cp\u003e18.2.3 CMP Slurry Characterization 573\u003c\/p\u003e \u003cp\u003e18.2.4 Summary 576\u003c\/p\u003e \u003cp\u003e18.3 CMP Slurry Blending and Distribution 577\u003c\/p\u003e \u003cp\u003e18.3.1 Slurry Delivery Technologies 578\u003c\/p\u003e \u003cp\u003e18.3.2 Continuous (On-Demand) Slurry Dispense and Metrology 578\u003c\/p\u003e \u003cp\u003e18.3.3 Slurry Turnovers in Fab Distribution 580\u003c\/p\u003e \u003cp\u003e18.3.4 Slurry Abrasive Settling and Dispersion 580\u003c\/p\u003e \u003cp\u003e18.3.4.1 Slurry Settling Rate Quantification 580\u003c\/p\u003e \u003cp\u003e18.3.4.2 Settling Behavior of Different Abrasive CMP Slurries 581\u003c\/p\u003e \u003cp\u003e18.3.4.3 Required Minimum Flow Velocity for CMP Slurries 584\u003c\/p\u003e \u003cp\u003e18.3.5 Summary 585\u003c\/p\u003e \u003cp\u003e18.4 CMP Slurry Filtration 586\u003c\/p\u003e \u003cp\u003e18.4.1 Slurry Filtration Methodology 587\u003c\/p\u003e \u003cp\u003e18.4.2 Filter Design Consideration 588\u003c\/p\u003e \u003cp\u003e18.4.3 Slurry Filter Characterization 591\u003c\/p\u003e \u003cp\u003e18.4.4 CMP Process and Consumable Trends and Challenges 592\u003c\/p\u003e \u003cp\u003e18.4.5 Slurry Filtration-Case Studies 595\u003c\/p\u003e \u003cp\u003e18.4.5.1 Silica Dispersion Single-Pass High-Retention Filtration 595\u003c\/p\u003e \u003cp\u003e18.4.5.2 Silica Slurry POU and Recirculation 596\u003c\/p\u003e \u003cp\u003e18.4.5.3 Silica Ceria and Alumina Slurry Tighter Filtration 599\u003c\/p\u003e \u003cp\u003e18.4.5.4 Polystyrene Latex (PSL) Bead Solution Filtration 602\u003c\/p\u003e \u003cp\u003e18.4.6 Summary 602\u003c\/p\u003e \u003cp\u003e18.5 Pump Handling Effects on CMP Slurry Filtration—Case Studies 603\u003c\/p\u003e \u003cp\u003e18.5.1 Pump Technologies and Applications 604\u003c\/p\u003e \u003cp\u003e18.5.2 Pump Shearing Effects on Slurry Abrasives 605\u003c\/p\u003e \u003cp\u003e18.5.3 Pump Handling and Filtration Data 606\u003c\/p\u003e \u003cp\u003e18.5.4 Test Cases 607\u003c\/p\u003e \u003cp\u003e18.5.5 Summary 620\u003c\/p\u003e \u003cp\u003e\u003cb\u003e19 The Facilities Side of CMP 627\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJohn H. Rydzewski\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e19.1 Introduction 627\u003c\/p\u003e \u003cp\u003e19.2 Characterization of the CMP Waste Stream 628\u003c\/p\u003e \u003cp\u003e19.3 Materials of Compatibility 629\u003c\/p\u003e \u003cp\u003e19.4 Collection System Methodologies 631\u003c\/p\u003e \u003cp\u003e19.5 Treatment System Components 632\u003c\/p\u003e \u003cp\u003e19.5.1 Collection Tank and pH Adjustment 632\u003c\/p\u003e \u003cp\u003e19.5.2 Oxidizer Removal 633\u003c\/p\u003e \u003cp\u003e19.5.3 Organics Removal 635\u003c\/p\u003e \u003cp\u003e19.5.4 Treatment of Suspended Solids 635\u003c\/p\u003e \u003cp\u003e19.5.5 Removal of Trace Metals 638\u003c\/p\u003e \u003cp\u003e19.6 Integration of Components—Putting It All Together 644\u003c\/p\u003e \u003cp\u003e19.6.1 Solids Treatment Before Metals Removal 644\u003c\/p\u003e \u003cp\u003e19.6.2 Solids Treatment After Metals Removal 645\u003c\/p\u003e \u003cp\u003e19.6.3 No Solids Removal 646\u003c\/p\u003e \u003cp\u003e19.7 Conclusions 647\u003c\/p\u003e \u003cp\u003e\u003cb\u003e20 CMP—The Next Fifteen Years 651\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJoseph M. Steigerwald\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e20.1 The Past 15 Years 651\u003c\/p\u003e \u003cp\u003e20.2 Challenges to Silicon IC Manufacturing 655\u003c\/p\u003e \u003cp\u003e20.3 New CMP Processes 661\u003c\/p\u003e \u003cp\u003e20.3.1 The Two-Year Development Cycle 661\u003c\/p\u003e \u003cp\u003e20.3.2 Finfet Transistors 664\u003c\/p\u003e \u003cp\u003e20.3.3 High-\u003ci\u003ek\u003c\/i\u003e Gate Oxides 665\u003c\/p\u003e \u003cp\u003e20.3.4 Other Examples 670\u003c\/p\u003e \u003cp\u003e20.4 CMP Challenges 673\u003c\/p\u003e \u003cp\u003e20.4.1 Development Time of New CMP Materials 673\u003c\/p\u003e \u003cp\u003e20.4.2 CMP Defect Reduction 675\u003c\/p\u003e \u003cp\u003e20.4.3 CMP Process Control 677\u003c\/p\u003e \u003cp\u003e20.4.3.1 CMP Film Thickness Control 678\u003c\/p\u003e \u003cp\u003e20.4.3.2 Process Control Systems, Consumables Material Control, and Excursion Prevention 680\u003c\/p\u003e \u003cp\u003e20.4.4 Cost of CMP 683\u003c\/p\u003e \u003cp\u003e20.5 Summary 683\u003c\/p\u003e \u003cp\u003e\u003cb\u003e21 Utilitarian Information for CMP Scientists and Engineers 687\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYongqing Lan and Yuzhuo Li\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e21.1 Physical and Chemical Properties of Abrasive Particles 687\u003c\/p\u003e \u003cp\u003e21.2 Physical and Chemical Properties on Oxidizers 690\u003c\/p\u003e \u003cp\u003e21.3 Physical and Chemical Properties on Relevant Surfactants 690\u003c\/p\u003e \u003cp\u003e21.3.1 Classification of Surfactants 690\u003c\/p\u003e \u003cp\u003e21.3.2 Critical Micellar Concentration 692\u003c\/p\u003e \u003cp\u003e21.3.3 Ternary Phase Diagrams Involving Surfactants 693\u003c\/p\u003e \u003cp\u003e21.4 Relevant Pourbaix Diagram 696\u003c\/p\u003e \u003cp\u003e21.5 Commonly Used Buffering Systems 703\u003c\/p\u003e \u003cp\u003e21.6 Useful Web Sites 704\u003c\/p\u003e \u003cp\u003eIndex 725\u003c\/p\u003e\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\u003cp\u003e\u003cfont size=\"3\"\u003eSubject Areas: Chemistry [\u003ca title=\"See our other books on Chemistry\" href=\"https:\/\/freshlyprintedbooks.co.uk\/search?q=%22Chemistry%20%5BPN%5D%22\"\u003ePN\u003c\/a\u003e]\u003c\/font\u003e\u003c\/p\u003e\r\n\r\n\r\n\u003c\/font\u003e","brand":"Wiley-Interscience","offers":[{"title":"Brand New","offer_id":52298042704152,"sku":"9780471719199","price":141.78,"currency_code":"GBP","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0730\/2037\/5320\/files\/9780471719199.jpg?v=1781732210","url":"https:\/\/freshlyprintedbooks.co.uk\/products\/microelectronic-applications-of-chemical-mechanical-planarization-hardback-9780471719199","provider":"Freshly Printed Books","version":"1.0","type":"link"}